參數(shù)資料
型號: HY5DU12422BTP-X
廠商: Hynix Semiconductor Inc.
英文描述: 512Mb DDR SDRAM
中文描述: 產(chǎn)品512Mb DDR SDRAM
文件頁數(shù): 36/37頁
文件大?。?/td> 396K
代理商: HY5DU12422BTP-X
Rev. 0.1 / May 2004
36
HY5DU12422B(L)TP
HY5DU12822B(L)TP
HY5DU121622B(L)TP
CAPACITANCE
(T
A
=25
o
C, f=100MHz )
Note :
1. VDD = min. to max., VDDQ = 2.3V to 2.7V, V
O
DC = VDDQ/2, V
O
peak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
Parameter
Pin
Symbol
Min
Max
Unit
Input Clock Capacitance
CK, /CK
C
I1
2.0
3.0
pF
Delta Input Clock Capacitance
CK, /CK
Delta C
I1
-
0.25
pF
Input Capacitance
All other input-only pins
C
I1
2.0
3.0
pF
Delta Input Capacitance
All other input-only pins
Delta C
I2
-
0.5
pF
Input / Output Capacitanc
DQ, DQS, DM
C
IO
4.0
5.0
pF
Delta Input / Output Capacitance
DQ, DQS, DM
Delta C
IO
-
0.5
pF
V
REF
V
TT
R
T
=50
Zo=50
C
L
=30pF
Output
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