參數(shù)資料
型號(hào): HY5DU121622CLTP-X
廠商: Hynix Semiconductor Inc.
英文描述: 512Mb DDR SDRAM
中文描述: 產(chǎn)品512Mb DDR SDRAM
文件頁(yè)數(shù): 28/31頁(yè)
文件大?。?/td> 253K
代理商: HY5DU121622CLTP-X
Rev. 1.0 / Mar. 2005
28
1
HY5DU12422C(L)TP
HY5DU12822C(L)TP
HY5DU121622C(L)TP
SYSTEM CHARACTERISTICS CONDITIONS for DDR SDRAMS
The following tables are described specification parameters that required in systems using DDR devices to ensure
proper performannce. These characteristics are for system simulation purposes and are guaranteed by design.
Input Slew Rate for DQ/ DM/ DQS
(Table a.)
Address & Control Input Setup & Hold Time Derating
(Table b.)
DQ & DM Input Setup & Hold Time Derating
(Table c.)
DQ & DM Input Setup & Hold Time Derating for Rise/ Fall Delta Slew Rate
(Table d.)
Output Slew Rate Characteristics (for x4, x8 Devices)
(Table e.)
Output Slew Rate Characteristics (for x16 Device)
(Table f.)
Output Slew Rate Matching Ratio Characteristics
(Table g.)
AC CHARACTERISTICS
DDR400
DDR333
DDR266
DDR200
UNIT
Note
PARAMETER
Symbol
min
max
min
max
min
max
min
max
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
0.5
4.0
0.5
4.0
0.5
4.0
0.5
4.0
V/ns
1,12
Input Slew Rate
Delta tIS
Delta tIH
UNIT
Note
0.5 V/ns
0
0
ps
9
0.4 V/ns
+50
0
ps
9
0.3 V/ns
+100
0
ps
9
Input Slew Rate
Delta tDS
Delta tDH
UNIT
Note
0.5 V/ns
0
0
ps
11
0.4 V/ns
+75
0
ps
11
0.3 V/ns
+150
0
ps
11
Input Slew Rate
Delta tDS
Delta tDH
UNIT
Note
±
0.0 ns/V
0
0
ps
10
±
0.25 ns/V
+50
+50
ps
10
±
0.5 ns/V
+100
+100
ps
10
Slew Rate Characteristic
Typical Range (V/
ns)
Minimum (V/ ns)
Maximum (V/ ns)
Note
Pullup Slew Rate
1.2 - 2.5
1.0
4.5
1,3,4,6,7,8
Pulldown Slew Rate
1.2 - 2.5
1.0
4.5
2,3,4,6,7,8
Slew Rate Characteristic
Typical Range (V/
ns)
Minimum (V/ ns)
Maximum (V/ ns)
Note
Pullup Slew Rate
1.2 - 2.5
1.0
4.5
1,3,4,6,7,8
Pulldown Slew Rate
1.2 - 2.5
1.0
4.5
2,3,4,6,7,8
Slew Rate Characteristic
DDR266A
DDR266B
DDR200
Note
Parameter
min
max
min
max
min
max
Output Slew Rate Matching Ratio
(Pullup to Pulldown)
-
-
-
-
0.71
1.4
5,12
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