參數(shù)資料
型號(hào): HY5DU121622BTP-X
廠商: Hynix Semiconductor Inc.
英文描述: 512Mb DDR SDRAM
中文描述: 產(chǎn)品512Mb DDR SDRAM
文件頁(yè)數(shù): 10/37頁(yè)
文件大小: 396K
代理商: HY5DU121622BTP-X
Rev. 0.1 / May 2004
10
HY5DU12422B(L)TP
HY5DU12822B(L)TP
HY5DU121622B(L)TP
WRITE MASK TRUTH TABLE
Function
CKEn-1
CKEn
/CS, /RAS,
/CAS, /WE
DM
ADDR
A10/
AP
BA
Note
Data Write
H
X
X
L
X
1
Data-In Mask
H
X
X
H
X
1
Note :
1.
Write Mask command masks burst write data with reference to LDQS/UDQS(Data Strobes) and it is not related
with read data. In case of x16 data I/O, LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15)
respectively.
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HY5DU12422B 512Mb DDR SDRAM
HY5DU12422BLTP 512Mb DDR SDRAM
HY5DU12422BLTP-X 512Mb DDR SDRAM
HY5DU12422BTP 512Mb DDR SDRAM
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