參數(shù)資料
型號(hào): HY5DS573222FP-33
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 256M(8Mx32) GDDR SDRAM
中文描述: 8M X 32 DDR DRAM, 0.6 ns, PBGA144
封裝: 12 X 12 MM, 0.80 MM PITCH, MO-205DAE, FBGA-144
文件頁(yè)數(shù): 28/28頁(yè)
文件大?。?/td> 326K
代理商: HY5DS573222FP-33
1
HY5DS573222F(P)
Rev. 1.0 / Feb. 2005
28
PACKAGE INFORMATION
12mm x 12mm, 144ball Fine-pitch Ball Grid Array
12mm±0.1mm
12mm±0.1mm
[ Ball Location ]
Ball existing
Optional (Thermal ball, NC, No ball)
Depopulated ball
8.8mm
8.8mm
0.8mm
0.86mm±0.05
0.35mm±0.05
1.2mm±0.1mm
Detailed "A"
Detailed "A"
0.12mm
0.5mm Diameter
0.55Max
0.45 Min
(MO 205-D, AE in JEDEC)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5DS573222FP-36 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM
HY5DS573222FP-4 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM
HY5DU113222FM-2 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DU113222FM-22 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DU113222FM-25 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM