參數(shù)資料
型號： HY5DS283222BFP-33
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 128M(4Mx32) GDDR SDRAM
中文描述： 4M X 32 DDR DRAM, 0.6 ns, PBGA144
封裝： 12 X 12 MM, LEAD FREE, FBGA-144
文件頁數(shù)： 21/28頁
文件大?。?/td> 1007K
代理商： HY5DS283222BFP-33
Rev. 1.0 / Feb. 2005
21
1
HY5DS283222BF(P)
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
1. V
DDQ
must not exceed the level of V
DD
.
2. V
IL
(min) is acceptable -1.5V AC pulse width with
≤
5ns of duration.
3. V
REF
is expected to be equal to 0.5*V
DDQ
of the transmitting device, and to track variations in the DC level of the same.
Peak to peak noise on V
REF
may not exceed
±
2% of the DC value.
DC CHARACTERISTICS I
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note
:
1. V
IN
= 0 to 3.6V, All other pins are not tested under V
IN
=0V. 2. D
OUT
is disabled, V
OUT
=0 to 2.7V
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 70
o
C
Storage Temperature
T
STG
-55 ~ 125
o
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
relative to V
SS
V
DD
-0.5 ~ 3.6
V
Voltage on V
DDQ
relative to V
SS
V
DDQ
-0.5 ~ 3.6
V
Output Short Circuit Current
I
OS
50
mA
Power Dissipation
P
D
2
W
Soldering Temperature
Time
T
SOLDER
260
10
o
C
sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
Power Supply Voltage
V
DD
V
DDQ
1.75
1.75
1.8
1.8
2.1
2.1
V
V
1
1
Input High Voltage
V
IH
V
REF
+ 0.15
-
V
DDQ
+ 0.3
V
Input Low Voltage
V
IL
-0.3
-
V
REF
- 0.15
V
2
Termination Voltage
V
TT
V
REF
- 0.04
V
REF
V
REF
+ 0.04
V
Reference Voltage
V
REF
0.49*V
DDQ
0.5*V
DDQ
0.51*V
DDQ
V
3
Parameter
Symbol
Min.
Max
Unit
Note
Input Leakage Current
I
LI
-2
2
uA
1
Output Leakage Current
I
LO
-5
5
uA
2
Output High Voltage
V
OH
V
TT
+ 0.76
-
V
I
OH
= -15.2mA
Output Low Voltage
V
OL
-
V
TT
- 0.76
V
I
OL
= +15.2mA
相關PDF資料
PDF描述
HY5DS283222BF-28 128M(4Mx32) GDDR SDRAM
HY5DS283222BF-33 128M(4Mx32) GDDR SDRAM
HY5DS283222BF-36 128M(4Mx32) GDDR SDRAM
HY5DS283222BF-4 128M(4Mx32) GDDR SDRAM
HY5DS573222F 256M(8Mx32) GDDR SDRAM
相關代理商/技術參數(shù)
參數(shù)描述
HY5DS283222BFP-36 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DS283222BFP-4 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DS573222F 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM
HY5DS573222F-28 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM
HY5DS573222F-33 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM
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