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參數(shù)資料
| 型號： | HY5DS283222BF-4 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 128M(4Mx32) GDDR SDRAM |
| 中文描述： | 4M X 32 DDR DRAM, 0.6 ns, PBGA144 |
| 封裝： | 12 X 12 MM, FBGA-144 |
| 文件頁數(shù)： | 13/28頁 |
| 文件大?。?/td> | 1007K |
| 代理商： | HY5DS283222BF-4 |
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Rev. 1.0 / Feb. 2005
13
1
HY5DS283222BF(P)
CKE FUNCTION TRUTH TABLE
Note :
When CKE=L, all DQ and DQS(0~3) must be in Hi-Z state.
1. CKE and /CS must be kept high for a minimum of 200 stable input clocks before issuing any command.
2. All command can be stored after 2 clocks from low to high transition of CKE.
3. Illegal if CK is suspended or stopped during the power down mode.
4. Self refresh can be entered only from the all banks idle state.
5. Disabling CK may cause malfunction of any bank which is in active state.
Current
State
CKEn-
1
CKEn
/CS
/RAS
/CAS
/WE
/ADD
Action
SELF
REFRESH
1
H
X
X
X
X
X
X
INVALID
L
H
H
X
X
X
X
Exit self refresh, enter idle after tSREX
L
H
L
H
H
H
X
Exit self refresh, enter idle after tSREX
L
H
L
H
H
L
X
ILLEGAL
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
NOP, continue self refresh
POWER
DOWN
2
H
X
X
X
X
X
X
INVALID
L
H
H
X
X
X
X
Exit power down, enter idle
L
H
L
H
H
H
X
Exit power down, enter idle
L
H
L
H
H
L
X
ILLEGAL
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
NOP, continue power down mode
ALL BANKS
IDLE
4
H
H
X
X
X
X
X
See operation command truth table
H
L
L
L
L
H
X
Enter self refresh
H
L
H
X
X
X
X
Exit power down
H
L
L
H
H
H
X
Exit power down
H
L
L
H
H
L
X
ILLEGAL
H
L
L
H
L
X
X
ILLEGAL
H
L
L
L
H
X
X
ILLEGAL
H
L
L
L
L
L
X
ILLEGAL
L
L
X
X
X
X
X
NOP
ANY STATE
OTHER
THAN
ABOVE
H
H
X
X
X
X
X
See operation command truth table
H
L
X
X
X
X
X
ILLEGAL
5
L
H
X
X
X
X
X
INVALID
L
L
X
X
X
X
X
INVALID
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5DS573222F | 256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-28 | 256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-33 | 256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-36 | 256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-4 | 256M(8Mx32) GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DS283222BFP-28 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM |
| HY5DS283222BFP-33 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM |
| HY5DS283222BFP-36 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM |
| HY5DS283222BFP-4 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM |
| HY5DS573222F | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM |
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