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參數(shù)資料
| 型號： | HY57V651620BLTC-75 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Banks x 1M x 16Bit Synchronous DRAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 81K |
| 代理商： | HY57V651620BLTC-75 |
HY57V651620B
Rev. 1.9/Apr.01
6
DC CHARACTERISTICS II
(TA=0 to 70
°
C
, V
D D
=3.3
±
0.3V
Note5
, V
SS
= 0 V )
Note :
1.I
D D 1
and I
D D 4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh R A S cycle time) is shown at AC CHARACTERISTICS II
3.HY57V651620BTC-55/6/7/75/8/10P/10S/10
4.HY57V651620BLTC-55/6/7/75/8/10P/10S/10
5..VDD(min) of HY57V651620B(L)TC-55/6/7 is 3.135V
Parameter
S y m b o l
Test Condition
Speed
Unit
Note
-55
-6
-7
-75
-8
-10P
-10S
-10
Operating Current
I
DD1
Burst length=1, One bank active
t
RC
≥
t
R C
(min), I
OL
= 0 m A
120
110
100
90
80
70
700
80
mA
1
Precharge Standby Current
in Power Down Mode
I
DD2P
CKE
≤
V
IL
(max), t
C K
= min
2
mA
I
D D 2 P S
CKE
≤
V
IL
(max), t
C K
=
∞
2
mA
Precharge Standby Current
in Non Power Down Mode
I
DD2N
CKE
≥
V
IH
(min), C S
≥
V
IH
(min), t
C K
= min
Input signals are changed one time
during 2clks. All other pins
≥
V
DD
-
0.2V or
≤
0.2V
15
mA
I
D D 2 N S
CKE
≥
V
IH
(min), t
C K
=
∞
Input signals are stable.
15
mA
Active Standby Current
in Power Down Mode
I
DD3P
CKE
≤
V
IL
(max), t
C K
= min
5
mA
I
D D 3 P S
CKE
≤
V
IL
(max), t
C K
=
∞
5
mA
Active Standby Current
in Non Power Down Mode
I
DD3N
CKE
≥
V
IH
(min), C S
≥
V
IH
(min), t
C K
= min
Input signals are changed one time
during 2clks. All other pins
≥
V
DD
-
0.2V or
≤
0.2V
30
mA
I
D D 3 N S
CKE
≥
V
IH
(min), t
C K
=
∞
Input signals are stable.
30
mA
Burst Mode Operating Current
I
DD4
t
CK
≥
t
CK
(min),
I
OL
= 0 m A
All banks active
C L = 3
150
140
130
120
110
90
90
90
mA
1
C L = 2
90
90
90
90
90
90
90
90
mA
Auto Refresh Current
I
DD5
t
R R C
≥
t
R R C
(min), All banks active
200
200
200
200
200
180
180
150
mA
2
Self Refresh Current
I
DD6
CKE
≤
0.2V
2
mA
3
500
uA
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V651620BLTC-8 | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BTC-10 | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BTC-10P | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BTC-10S | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BTC-55 | 4 Banks x 1M x 16Bit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V651620BLTC-8 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4Mx16|3.3V|4K|6/7/75/10P/10S|SDR SDRAM - 64M |
| HY57V651620BLTC-P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V651620BLTC-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V651620BTC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4Mx16|3.3V|4K|H|SDR SDRAM - 64M |
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