參數(shù)資料
型號(hào): HY57V64820HGTP-8
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 4 Banks x 2M x 8Bit Synchronous DRAM
中文描述: 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54
文件頁(yè)數(shù): 5/11頁(yè)
文件大?。?/td> 134K
代理商: HY57V64820HGTP-8
HY57V64820HG
Rev. 0.5/Sep. 02
5
CAPACITANCE
(TA=25
°
C
, f=1MHz)
OUTPUT LOAD CIRCUIT
DC CHARACTERISTICS I
(TA=0 to 70
°
C
, V
DD
=3.3
±
0.3V)
Note :
1.V
IN
= 0 to 3.6V, All other pins are not tested under V
IN
=0V
2.D
OUT
is disabled, V
OUT
=0 to 3.6V
Parameter
Pin
Symbol
Min
Max
Unit
Input capacitance
CLK
C
I1
2
4
pF
A0 ~ A11, BA0, BA1, CKE, CS, RAS,
CAS, WE, DQM
CI
2
2.5
5
pF
Data input / output capacitance
DQ0 ~ DQ7
C
I/O
2
6.5
pF
Parameter
Symbol
Min.
Max
Unit
Note
Input Leakage Current
I
LI
-1
1
uA
1
Output Leakage Current
I
LO
-1
1
uA
2
Output High Voltage
V
OH
2.4
-
V
I
OH
= -4mA
Output Low Voltage
V
OL
-
0.4
V
I
OL
= +4mA
Vtt=1.4V
RT=250
50pF
Output
50pF
Output
DC Output Load Circuit
AC Output Load Circuit
相關(guān)PDF資料
PDF描述
HY57V64820HGTP-H 4 Banks x 2M x 8Bit Synchronous DRAM
HY57V64820HGTP-K 4 Banks x 2M x 8Bit Synchronous DRAM
HY57V64820HGTP-P Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 2200uF; Voltage: 25V; Case Size: 12.5x25 mm; Packaging: Bulk
HY57V64820HGTP-S 4 Banks x 2M x 8Bit Synchronous DRAM
HY57V64820HGT-5 4 Banks x 2M x 8Bit Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY57V64820HGTP-H 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM
HY57V64820HGTP-K 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM
HY57V64820HGTP-P 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM
HY57V64820HGTP-S 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM
HY57V64820HGT-S 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM