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| 型號： | HY57V64820HGT-P |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 100PF50V_5%_NPO_,SM0603 |
| 中文描述： | 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 134K |
| 代理商： | HY57V64820HGT-P |
HY57V64820HG
Rev. 0.5/Sep. 02
7
AC CHARACTERISTICS I
(AC operating conditions unless otherwise noted)
Note :
1.Assume tR / tF (input rise and fall time ) is 1ns
2.Access times to be measured with input signals of 1v/ns edge rate
Parameter
Symbol
-6
-7
-K
-H
-8
-P
-S
Unit
Note
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
System clock
cycle time
CAS
Latency = 3
tCK3
6
1000
7
1000
7.5
1000
7.5
1000
8
1000
10
1000
10
1000
ns
CAS
Latency = 2
tCK2
10
10
7.5
10
10
10
12
ns
Clock high pulse width
tCHW
2.5
-
2.5
-
2.5
-
2.5
-
3
-
3
-
3
-
ns
1
Clock low pulse width
tCLW
2.5
-
2.5
-
2.5
-
2.5
-
3
-
3
-
3
-
ns
1
Access time
from clock
CAS
Latency = 3
tAC3
-
5.4
-
5.4
-
5.4
5.4
-
6
6
-
6
ns
2
CAS
Latency = 2
tAC2
-
6
-
6
-
5.4
6
-
6
-
6
-
8
ns
Data-out hold time
tOH
2.7
-
2.7
-
2.7
-
2.7
-
3
-
3
-
3
-
ns
Data-Input setup time
tDS
1.5
-
1.5
-
1.5
-
1.5
-
2
-
2
-
2
-
ns
1
Data-Input hold time
tDH
0.8
-
0.8
-
0.8
-
0.8
-
1
-
1
-
1
-
ns
1
Address setup time
tAS
1.5
-
1.5
-
1.5
-
1.5
-
2
-
2
-
2
-
ns
1
Address hold time
tAH
0.8
-
0.8
-
0.8
-
0.8
-
1
-
1
-
1
-
ns
1
CKE setup time
tCKS
1.5
-
1.5
-
1.5
-
1.5
-
2
-
2
-
2
-
ns
1
CKE hold time
tCKH
0.8
-
0.8
-
0.8
-
0.8
-
1
-
1
-
1
-
ns
1
Command setup time
tCS
1.5
-
1.5
-
1.5
-
1.5
-
2
-
2
-
2
-
ns
1
Command hold time
tCH
0.8
-
0.8
-
0.8
-
0.8
-
1
-
1
-
1
-
ns
1
CLK to data output in low Z-
time
tOLZ
1
-
1.5
-
1.5
-
1.5
-
1
-
1
-
2
-
ns
CLK to data
output in high
Z-time
CAS
Latency = 3
tOHZ3
5.4
5.4
5.4
5.4
6
6
6
ns
CAS
Latency = 2
tOHZ2
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V64820HGT-S | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V64820HGTP | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V64820HGLT-7 | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V64820HGLT-8 | 4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V64820HGLT-H | CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V64820HGTP-5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V64820HGTP-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V64820HGTP-6 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V64820HGTP-7 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM |
| HY57V64820HGTP-8 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 8Bit Synchronous DRAM |
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