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參數(shù)資料
| 型號(hào)： | HY57V561620CLT-P |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Banks x 4M x 16Bit Synchronous DRAM |
| 中文描述： | 16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 217K |
| 代理商： | HY57V561620CLT-P |
HY57V561620C(L)T(P)
Rev. 0.5 / June 2004 4
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION
(TA=0 to 70
°
C
)
Note :
1.All voltages are referenced to V
SS
= 0V
2.V
IH
(max) is acceptable 5.6V AC pulse width with
≤
3ns of duration
3.V
IL
(min) is acceptable -2.0V AC pulse width with
≤
3ns of duration
AC OPERATING CONDITION
(TA=0 to 70
°
C
, V
DD
=3.3
±
0.3V, V
SS
=0V)
Note :
1. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF)
For details, refer to AC/DC output circuit
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 70
°
C
Storage Temperature
T
STG
-55 ~ 125
°
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
relative to V
SS
V
DD,
V
DDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
I
OS
50
mA
Power Dissipation
P
D
1
W
Soldering Temperature
Time
T
SOLDER
260
10
°
C
Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
1
Input High Voltage
V
IH
2.0
3.0
VDDQ + 0.3
V
1,2
Input Low Voltage
V
IL
- 0.3
0
0.8
V
1,3
Parameter
Symbol
Value
Unit
Note
AC Input High / Low Level Voltage
V
IH
/ V
IL
2.4/0.4
V
Input Timing Measurement Reference Level Voltage
Vtrip
1.4
V
Input Rise / Fall Time
tR / tF
1
ns
Output Timing Measurement Reference Level
Voutref
1.4
V
Output Load Capacitance for Access Time Measurement
CL
50
pF
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V561620CLTP-6 | 4 Banks x 4M x 16Bit Synchronous DRAM |
| HY57V561620CLTP-7 | 4 Banks x 4M x 16Bit Synchronous DRAM |
| HY57V561620CLTP-8 | 4 Banks x 4M x 16Bit Synchronous DRAM |
| HY57V561620CLTP-H | 4 Banks x 4M x 16Bit Synchronous DRAM |
| HY57V561620CLTP-K | 4 Banks x 4M x 16Bit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V561620CLTP-6 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 4M x 16Bit Synchronous DRAM |
| HY57V561620CLTP-7 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 4M x 16Bit Synchronous DRAM |
| HY57V561620CLTP-8 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 4M x 16Bit Synchronous DRAM |
| HY57V561620CLTP-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 4M x 16Bit Synchronous DRAM |
| HY57V561620CLTP-K | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 4M x 16Bit Synchronous DRAM |
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