- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367346 > HY57V281620HCLT-6 x16 SDRAM PDF資料下載
參數(shù)資料
| 型號： | HY57V281620HCLT-6 |
| 英文描述： | x16 SDRAM |
| 中文描述： | x16內(nèi)存 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 61K |
| 代理商： | HY57V281620HCLT-6 |
HY57V281620A
Rev. 1.3/Aug. 01
7
DC CHARACTERISTICS II
(TA=0 to 70
°
C
, V
DD
=3.3
±
0.3V, V
SS
=0V)
Note :
1.I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V281620AT-6/7/K/H/8/P/S
4.HY57V281620ALT-6/7/K/H/8/P/S
Parameter
Symbol
Test Condition
Speed
Unit
Note
-6
-7
-K
-H
-8
-P
-S
Operating Current
I
DD1
Burst length=1, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
120
120
110
110
100
100
100
mA
1
Precharge Standby Current
in Power Down Mode
I
DD2P
CKE
≤
V
IL
(max), t
CK
= 15ns
2
mA
I
DD2PS
CKE
≤
V
IL
(max), t
CK
=
∞
2
Precharge Standby Current
in Non Power Down Mode
I
DD2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= 15ns
Input signals are changed one time during
2clks. All other pins
≥
V
DD
-0.2V or
≤
0.2V
20
mA
I
DD2NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
10
Active Standby Current
in Power Down Mode
I
DD3P
CKE
≤
V
IL
(max), t
CK
= 15ns
7
mA
I
DD3PS
CKE
≤
V
IL
(max), t
CK
=
∞
7
Active Standby Current
in Non Power Down Mode
I
DD3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= 15ns
Input signals are changed one time during
2clks. All other pins
≥
V
DD
-0.2V or
≤
0.2V
40
mA
I
DD3NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
40
Burst Mode Operating
Current
I
DD4
t
CK
≥
t
CK
(min), I
OL
=0mA
All banks active
CL=3
140
130
120
120
110
100
100
mA
1
CL=2
100
100
120
100
100
100
100
Auto Refresh Current
I
DD5
t
RRC
≥
t
RRC
(min), All banks active
240
240
240
220
200
200
200
mA
2
Self Refresh Current
I
DD6
CKE
≤
0.2V
2
mA
3
800
uA
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V281620HCLT-6I | SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC |
| HY57V281620HCLT-7 | SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC |
| HY57V281620HCLT-7I | x16 SDRAM |
| HY57V281620HCLT-8 | x16 SDRAM |
| HY57V281620HCLT-8I | SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V281620HCLT-6I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC |
| HY57V281620HCLT-7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC |
| HY57V281620HCLT-7I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V281620HCLT-8 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 16bits Synchronous DRAM |
| HY57V281620HCLT-8I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 16bits Synchronous DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。