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參數(shù)資料
| 型號(hào)： | HY57V281620ELTP-6 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 |
| 文件頁數(shù)： | 8/13頁 |
| 文件大小： | 126K |
| 代理商： | HY57V281620ELTP-6 |
Rev. 1.1 / J an. 2005
8
Synchronous DRAM Memory 128Mbit (8Mx16bit)
HY57V281620E(L)T(P) Series
CAPACITANCE
(T
A
= 0 to 70
o
C
, f=1MHz, V
DD
=3.3V)
DC CHARACTERISTICS I
(T
A
= 0 to 70
o
C
)
Note:
1. V
IN
= 0 to 3.3V, All other balls are not tested under V
IN
=0V
2. D
OUT
is disabled, V
OUT
=0 to 3.6
Parameter
Pin
Symbol
Min
Max
Unit
Input capacitance
CLK
CI1
2.0
4.0
pF
A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS,
WE, LDQM, UDQM
CI2
2.5
5.0
pF
Data input / output capacitance
DQ0 ~ DQ15
CI/O
3.0
5.5
pF
Parameter
Symbol
Min
Max
Unit
Note
Input Leakage Current
I
LI
-1
1
uA
1
Output Leakage Current
I
LO
-1
1
uA
2
Output High Voltage
V
OH
2.4
-
V
IOH = -2mA
Output Low Voltage
V
OL
-
0.4
V
IOL = +2mA
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| HY57V281620HCLT-H | 4 Banks x 2M x 16bits Synchronous DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V281620ELTP-7 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELTP-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ET | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ET-5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ET-6 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
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