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參數(shù)資料
| 型號(hào)： | HY57V281620ELT-7 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大小： | 126K |
| 代理商： | HY57V281620ELT-7 |
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Rev. 1.1 / J an. 2005
6
Synchronous DRAM Memory 128Mbit (8Mx16bit)
HY57V281620E(L)T(P) Series
BASIC FUNCTIONAL DESCRIPTION
Mode Register
BA1
BA0
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
0
0
0
OP Code
0
0
CAS Latency
BT
Burst Length
OP Code
A9
Write Mode
0
Burst Read and Burst Write
1
Burst Read and Single Write
Burst Type
A3
0
1
Burst Type
Sequential
Interleave
Burst Length
A2
A1
A0
Burst Length
A3 = 0
A3= 1
0
0
0
0
0
1
1
1
2
2
0
0
1
1
1
1
1
1
0
0
1
1
0
1
0
1
0
1
4
4
8
8
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Full Page
Reserved
CAS Latency
A6
A5
A4
CAS Latency
0
0
0
Reserved
0
0
1
1
0
1
0
2
0
1
1
3
1
0
0
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
1
Reserved
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V281620ET-6 | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ET-7 | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ET-H | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELTP-H | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ET | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V281620ELT-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELTP-5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELTP-6 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELTP-7 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELTP-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
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