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參數(shù)資料
| 型號： | HY57V281620AT-SI |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Banks x 2M x 16bits Synchronous DRAM |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 81K |
| 代理商： | HY57V281620AT-SI |
HY57V281620A
Rev. 0.4/Apr.01
4
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability.
DC OPERATING CONDITION
(T
A
= -40 to 85
°
C
)
Note :
1.All voltages are referenced to V
SS
= 0 V
2.V
IH
(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3.V
IL
(min) is acceptable -2.0V AC pulse width with <=3ns of duration.
AC OPERATING TEST CONDITION
(T
A
= -40 to 85
°
C
, V
D D
=3.3
±
0.3V, V
SS
=0V)
Note :
1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output
load circuit
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
-40 ~ 85
°
C
Storage Temperature
T
S T G
-55 ~ 125
°
C
Voltage on Any Pin relative to V
S S
V
IN
, V
O U T
-1.0 ~ 4.6
V
Voltage on V
D D
relative to V
SS
V
DD,
V
D D Q
-1.0 ~ 4.6
V
Short Circuit Output Current
I
O S
50
m A
Power Dissipation
P
D
1
W
Soldering Temperature
T i m e
T
SOLDER
260
10
°
C
S e c
Parameter
Symbol
Min
Typ
M a x
Unit
Note
Power Supply Voltage
V
D D
, V
D D Q
3.0
3.3
3.6
V
1
Input High voltage
V
IH
2.0
3.0
V
DDQ
+ 0.3
V
1,2
Input Low voltage
V
IL
-0.3
0
0.8
V
1,3
Parameter
Symbol
V a l u e
Unit
Note
AC Input High / Low Level Voltage
V
IH
/ V
IL
2.4/0.4
V
Input Timing Measurement Reference Level Voltage
Vtrip
1.4
V
Input Rise / Fall Time
tR / tF
1
ns
Output Timing Measurement Reference Level Voltage
Voutref
1.4
V
Output Load Capacitance for Access Time Measurement
C
L
50
pF
1
相關PDF資料 |
PDF描述 |
|---|---|
| HY57V281620ALT-HI | 4 Banks x 2M x 16bits Synchronous DRAM |
| HY57V281620ALT-KI | 4 Banks x 2M x 16bits Synchronous DRAM |
| HY57V281620ELT-H | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELT | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELT-5 | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V281620BLT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx16|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M |
| HY57V281620BT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx16|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M |
| HY57V281620ELT | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELT-5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELT-6 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
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