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參數(shù)資料
| 型號： | HY57V281620ALT-KI |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Banks x 2M x 16bits Synchronous DRAM |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 81K |
| 代理商： | HY57V281620ALT-KI |
HY57V281620A
Rev. 0.4/Apr.01
6
DC CHARACTERISTICS II
(TA= -40 to 85
°
C
, V
DD
=3.3
±
0.3V, V
SS
=0V)
Note:
1.I
D D 1
and I
D D 4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh R A S cycle time) is shown at AC CHARACTERISTICS II
3.HY57V281620AT-KI/HI/PI/SI
4.HY57V281620ALT-KI/HI/PI/SI
Parameter
Symbol
Test Condition
Speed
Unit
Note
-KI
-HI
-PI
-SI
Operating Current
I
DD1
Burst length=1, One bank active
t
R C
≥
t
R C
(min), I
OL
= 0 m A
120
110
100
100
mA
1
Precharge Standby Current
in Power Down Mode
I
D D 2 P
C K E
≤
V
IL
(max), t
C K
= 15ns
2
mA
I
D D 2 P S
C K E
≤
V
IL
(max), t
C K
=
∞
2
Precharge Standby Current
in Non Power Down Mode
I
D D 2 N
C K E
≥
V
IH
(min), C S
≥
V
IH
(min), t
CK
= 15ns
Input signals are changed one time during
2clks. All other pins
≥
V
D D
-0.2V or
≤
0.2V
20
mA
I
D D 2 N S
C K E
≥
V
IH
(min), t
C K
=
∞
Input signals are stable.
10
Active Standby Current
in Power Down Mode
I
D D 3 P
C K E
≤
V
IL
(max), t
C K
= 15ns
7
mA
I
D D 3 P S
C K E
≤
V
IL
(max), t
C K
=
∞
7
Active Standby Current
in Non Power Down Mode
I
D D 3 N
C K E
≥
V
IH
(min), C S
≥
V
IH
(min), t
CK
= 15ns
Input signals are changed one time during
2clks. All other pins
≥
V
D D
-0.2V or
≤
0.2V
40
mA
I
D D 3 N S
C K E
≥
V
IH
(min), t
C K
=
∞
Input signals are stable.
40
Burst Mode Operating
Current
I
DD4
t
C K
≥
t
C K
(min), I
OL
= 0 m A
All banks active
C L = 3
120
120
100
100
mA
1
C L = 2
120
100
100
90
Auto Refresh Current
I
DD5
t
R R C
≥
t
RRC
(min), All banks active
240
220
200
200
mA
2
Self Refresh Current
I
DD6
C K E
≤
0.2V
2
mA
3
800
u A
4
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PDF描述 |
|---|---|
| HY57V281620ELT-H | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELT | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELT-5 | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELT-6 | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| HY57V281620ELT-7 | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V281620ALT-P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V281620ALT-PI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 16bits Synchronous DRAM |
| HY57V281620ALT-S | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 16bits Synchronous DRAM |
| HY57V281620ALT-SI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 16bits Synchronous DRAM |
| HY57V281620AT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx16|3.3V|4K|6|SDR SDRAM - 128M |
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