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參數(shù)資料
| 型號(hào)： | HY57V161610ET-7 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 |
| 封裝： | 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 181K |
| 代理商： | HY57V161610ET-7 |
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HY57V161610E
Rev. 0.2 / Aug. 2003
6
DC CHARACTERISTICS II
(TA=0
°
C
to 70
°
C
, V
DD
=3.0V to
3.6V, V
SS
=0V
Note1,2
)
Note :
1.V
DD
(min) is 3.15V when HY57V161610ET-7 operates at CAS latency=2 and tCK2=8.9ns.
2.V
DD
(min) of HY57V161610ET-5/55 is 3.15V
3.I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open.
Parameter
Symbol
Test Condition
Speed
Unit
Note
-5
-55
-6
-7
-8
-10
-15
Operating Current
IDD1
Burst Length=1, One bank active
tRAS
≥
tRAS(min),tRP
≥
tRP(min),
IO=0mA
130
130
120
110
110
110
100
mA
2
Precharge Standby
Current
in power down mode
IDD2P
CKE
≤
VIL(max), tCK = 15ns
2
mA
IDD2PS
CKE
≤
VIL(max), tCK =
∞
1
Precharge Standby
Current
in non power down
mode
IDD2N
CKE
≥
VIH(min), CS
≥
VIH(min), tCK =
15ns
Input signals are changed one time
during 2Clks. All other pins
≥
VDD-0.2V
or
≤
0.2V
25
mA
IDD2NS
CKE
≥
VIH(min), tCK =
∞
Input signals are stable.
15
Active Standby Current
in power down mode
IDD3P
CKE
≤
VIL(max), tCK = min
3.0
mA
IDD3PS
CKE
≤
VIL(max), tCK =
∞
3.0
Active Standby Current
in non power down
mode
IDD3N
CKE
≥
VIH(min), CS
≥
VIH(min), tCK =
min
Input signals are changed one time
during 2CLKs. All other pins
≥
VDD-
0.2V or
≤
0.2V
50
mA
IDD3NS
CKE
≥
VIH(min), tCK =
∞
Input signals are stable
30
Burst Mode Operating
Current
IDD4
tCK
≥
tCK(min),
tRAS
≥
tRAS(min),
IO=0mA
All banks active
CL=3
130
130
120
110
110
90
80
mA
3
CL=2
-
-
110
110
-
-
-
CL=1
-
-
-
-
-
-
70
Auto Refresh Current
IDD5
tRRC
≥
tRRC(min), All banks active
130
130
110
110
110
110
100
mA
Self Refresh Current
IDD6
CKE
≤
0.2V
2
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V161610ET-8 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-10 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-15 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-5 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-55 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V161610ET-7I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-8 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-8I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ETP-7 | 制造商:SK Hynix Inc 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
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