參數(shù)資料
型號: HY57V161610ET-55I
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 2 Banks x 512K x 16 Bit Synchronous DRAM
中文描述: 1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50
封裝: 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
文件頁數(shù): 5/13頁
文件大?。?/td> 482K
代理商: HY57V161610ET-55I
HY57V161610ET-I
Rev. 0.1 / Nov. 2003
5
CAPACITANCE
(TA=25
°
C
, f=1MHz)
OUTPUT LOAD CIRCUIT
DC CHARACTERISTICS I
(TA=-40
°
C
to 85
°
C
)
Note :
1.V
DD
(min) is 3.15V when HY57V161610ET-7I operates at CAS latency=2 and tCK2=8.9ns.
2.V
DD
(min) of HY57V161610ET-5I/55I is 3.15V
3.V
IN
= 0 to 3.6V, All other pins are not under test = 0V
4.D
OUT
is disabled, V
OUT
=0 to 3.6V
Parameter
Pin
Symbol
Min
Max
Unit
Input capacitance
CLK
C
I1
2.5
4
pF
A0 ~ A10, BA
CKE, CS, RAS, CAS, WE, UDQM, LDQM
C
I2
2.5
5
pF
Data input / output capacitance
DQ0 ~ DQ15
C
I/O
4
6.5
pF
Parameter
Symbol
Min.
Max
Unit
Note
Power Supply Voltage
V
DD
3.0
3.6
V
1, 2
Input leakage current
IL
-1
1
uA
3
Output leakage current
IO
-1
1
uA
4
Output high voltage
V
OH
2.4
-
V
I
OH
= -4mA
Output low voltage
V
OL
-
0.4
V
I
OL
=+4mA
Vtt=1.4V
RT=250
30pF
Output
DC Output Load Circuit
30pF
Output
AC Output Load Circuit
相關(guān)PDF資料
PDF描述
HY57V161610E 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-6 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-7 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-8 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-10 2 Banks x 512K x 16 Bit Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY57V161610ET-5I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-6 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-6I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-7 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-7I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM