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參數(shù)資料
| 型號： | HY51V7403HG |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | Chemicals, Coatings; Features:Protects & insulates components, circuit traces & repairs. Improves & protects circuit board modifications; protects against moisture, abrasion & chemicals. Resistivity: 3 x 10^13 Ohm.; Volume:5ml |
| 中文描述： | 4米× 4位EDO公司的DRAM |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 96K |
| 代理商： | HY51V7403HG |
HY51V(S)17403HG/HGL
Rev.0.1/Apr.01
8
EDO Page Mode Cycle
EDO Page Mode Read-Modify-Write Cycle
TEST Mode cycle
Self Refresh Mode(L-version)
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
EDO mode cyle time
tHPC
20
-
25
-
30
-
ns
20
EDO mode /RAS pulse width
tRASP
-
100K
-
100K
-
100K
ns
16
Access time from /CAS precharge
tACP
-
30
-
35
-
40
ns
9,17,19
/RAS hold time from /CAS precharge
tRHCP
30
-
35
-
40
-
ns
Output data hold time from /CAS low
tDOH
3
-
3
-
3
-
ns
9
/CAS hold time referred /OE
tCOL
8
-
10
-
13
-
ns
/CAS to /OE setup time
tCOP
5
-
5
-
5
-
ns
Read command hold time
from /CAS precharge
tRHCP
30
-
35
-
40
-
ns
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
EDO Page read-modify-write cycle time
tHPRWC
57
-
68
-
79
-
ns
EDO mode read-modify-write cycle
/CAS precharge to /WE delay time
tCPW
45
-
54
-
62
-
ns
14
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
Test mode /WE setup time
tWTS
0
-
0
-
0
-
ns
Test mode /WE hold time
tWTH
10
-
10
-
10
-
ns
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
/RAS pulse width (self refresh)
tRASS
100
-
100
-
100
-
us
/RAS precharge time(self refresh)
tRPS
90
-
110
-
130
-
ns
/CAS hold time(self refresh)
tCHS
-50
-
-50
-
-50
-
ns
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| HY534256ALS | 256K x 4-bit CMOS DRAM |
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