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        • 您現(xiàn)在的位置:買賣IC網(wǎng) > PDF目錄367323 > HY51V17410ASLR-70 x4 Fast Page Mode DRAM PDF資料下載
        參數(shù)資料
        型號: HY51V17410ASLR-70
        英文描述: x4 Fast Page Mode DRAM
        中文描述: x4快速頁面模式的DRAM
        文件頁數(shù): 1/11頁
        文件大?。?/td> 94K
        代理商: HY51V17410ASLR-70
        當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁
        HY51V(S)16400HG/HGL
        4M x 4Bit Fast Page DRAM
        This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
        responsibility for use of circuits described. No patent licenses are implied.
        Rev.0.1/Apr.01
        ESCRIPTION
        The HY51V(S)16400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
        HY51V(S)16400HG/HGL has realized higher density, higher performance and various functions by utiliz-
        ing advanced CMOS process technology. The HY51V(S)16400HG/HGL offers Fast Page Mode as a high
        speed access mode. Multiplexed address inputs permit the HY51V(S)16400HG/HGL to be packaged in
        standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densi-
        ties and is compatible with widely available automated testing and insertion equipment.
        System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability
        with high performance logic families such as Schottky TTL.
        FEATURES
        Fast Page Mode capability
        Read-modify-write capability
        Multi-bit parallel test capability
        TTL(3.3V) compatible inputs and outputs
        /RAS only, CAS-before-/RAS, Hidden and self
        refresh(L-version) capability
        Fast access time and cycle time
        ORDERING INFORMATION
        Part No
        tRAC
        tCAC
        tRC
        tPC
        HY51V(S)16400HG/HGL-5
        50ns
        13ns
        90ns
        35ns
        HY51V(S)16400HG/HGL-6
        60ns
        15ns
        110ns
        40ns
        HY51V(S)16400HG/HGL-7
        70ns
        18ns
        130ns
        45ns
        50ns
        60ns
        70ns
        Active
        324mW
        288mW
        252mW
        Standby
        7.2mW(CMOS level Max)
        0.36mW (L-version : Max)
        Part Number
        Access Time
        Package
        HY51V(S)16400HGJ/HG(L)J-5
        HY51V(S)16400HGJ/HG(L)J-6
        HY51V(S)16400HGJ/HG(L)J-7
        50ns
        60ns
        70ns
        300mil 24(26)pin SOJ
        HY51V(S)16400HGT/HG(L)T-5
        HY51V(S)16400HGT/HG(L)T-6
        HY51V(S)16400HGT/HG(L)T-7
        50ns
        60ns
        70ns
        300mil 24(26)pin TSOP-II
        PRELIMINARY
        JEDEC standard pinout
        24(26)pin plastic SOJ/TSOP-II(300mil)
        Single power supply of 3.3V +/- 0.3V
        Battery back up operation(L-version)
        Power dissipation
        Refresh cycle
        Part No
        Ref
        Normal
        L-part
        HY51V16400HG
        4K
        64ms
        HY51V16400HGL
        4K
        128ms
        (S) : Self refresh, (L) : Low power
        相關(guān)PDF資料
        PDF描述
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        HY51V17410ASLT-70 x4 Fast Page Mode DRAM
        HY51V17410ASLT-80 x4 Fast Page Mode DRAM
        HY51V17410AT-60 x4 Fast Page Mode DRAM
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