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    參數(shù)資料
    型號: HY51V17404ASLT-80
    英文描述: x4 EDO Page Mode DRAM
    中文描述: x4 EDO公司頁面模式的DRAM
    文件頁數(shù): 10/11頁
    文件大?。?/td> 94K
    代理商: HY51V17404ASLT-80
    HY51V(S)16400HG/HGL
    Rev.0.1/Apr.01
    10
    18. Access time is determined by the longest among t
    AA
    or t
    CAC
    or t
    ACP
    19. In delayed write or read-modify-write cycels, OE must disable output buffer prior to applying data to the
    device, After /RAS is reset, if t
    OEH
    >=t
    CWL
    , the I/O pin will remain open circuit (high impedance)
    If t
    OEH
    < t
    CWL
    , invalid data will be out at each I/O
    20. In a test mode read cycle, the value of tRAC, tAA, tCAC is delayed by 2ns to 5ns for the specified
    value. These parameters should be specified in test mode cycles by adding the above value to the
    specified value in this data sheet
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