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參數(shù)資料
| 型號： | HY514400BT |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 1Mx4, Fast Page mode |
| 中文描述： | 1Mx4，快速頁模式 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 100K |
| 代理商： | HY514400BT |
HY514400B
DC CHARACTERISTICS
Symbol
I
CC1
Parameter
Operating Current
Speed
50
60
70
Unit
mA
(T
A
= 0
°
C
to 70
°
C
, V
CC
= 5V
±
10%
, V
SS
= 0V, unless otherwise noted.)
Note
100
90
80
Test condition
/RAS, /CAS Cycling
t
RC =
t
RC(min)
Max.
I
CC2
TTL Standby
Current
mA
2
/RAS, /CAS
≥
V
IH(min)
Other inputs
≥
V
SS
I
CC3
/RAS-only Refresh
Current
50
60
70
mA
100
90
80
/RAS Cycling,/CAS
=
V
IH
t
RC =
t
RC(min)
I
CC4
Fast Page mode Current
50
60
70
mA
70
60
50
/CAS Cycling, /RAS
=
V
IL
t
HPC =
t
HPC(min)
I
CC5
CMOS Standby
Current
SL-part
mA
μ
A
1
200
/RAS
=
/CAS
≥
V
CC -
0.2V
I
CC6
/CAS-before-/RAS
Refresh Current
50
60
70
mA
100
90
80
/RAS & /CAS = 0.2V
t
RC =
t
RC(min.)
I
CC7
Battery Back-up
Current (SL-part)
μ
A
tRC=125μs
/CAS
=
CBR cycling or 0.2V
/OE & /WE
=
V
CC -
0.2V
Address
=
Vcc-0.2V or 0.2V
DQ0~DQ3
=
Vcc-0.2, 0.2V or Open
I
CC8
Self Refresh Current
(SL-part)
μ
A
200
/RAS & /CAS
=
0.2V
Other pins are same as I
CC7
1. I
CC1
, I
CC3
, I
CC4
and I
CC6
depend on output loading and cycle rates(t
RC
and t
PC
).
2. Specified values are obtained with output unloaded.
3. I
CC
is specified as an average current. In I
CC1
, I
CC3
, I
CC6
, address can be changed only once while /RAS=V
IL
. In I
CC4
,
address can be changed maximum once while /CAS=V
IH
within one cycle time t
PC
.
4. Only tRAS(max)
= 1μs is applied to refresh of battery backup but tRAS(max) = 10μs is to applied to normal functional
operation.
5. Icc5(max.), Icc7 and Icc8 are applied to SL-part only.
5
300
1Mx4,FP DRAM
Rev.10 / Jan.97
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY514400 | 1M x 4-bit CMOS DRAM |
| HY62256A-I | DRAM & SRAM MEMORY |
| HY6340 | Switchable Constant Current Laser Diode Driver |
| HYB314171BJ-50 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-50- | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY514400BT-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| HY514400BT-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| HY514400BT-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| HY514400J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 4-bit CMOS DRAM |
| HY514400J-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
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