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參數(shù)資料
| 型號： | HY29LV400BF70I |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| 中文描述： | 4兆位（為512k × 8/256K × 16）低壓快閃記憶體 |
| 文件頁數(shù)： | 14/40頁 |
| 文件大小： | 564K |
| 代理商： | HY29LV400BF70I |
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14
Rev. 1.0/Nov. 01
HY29LV400
tomatic Erase algorithm that automatically
preprograms and verifies the entire memory for
an all zero data pattern prior to electrical erase.
The host system is not required to provide any
controls or timings during these operations.
Commands written to the device during execution
of the Automatic Erase algorithm are ignored. Note
that a hardware reset immediately terminates the
chip erase operation. To ensure data integrity, the
aborted Chip Erase command sequence should
be reissued once the reset operation is complete.
Figure 4. Normal and Unlock Bypass Programming Procedures
Figure 5. Chip Erase Procedure
START
Issue CHIP ERASE
Command Sequence
Check Erase Status
(See Write Operation Status
Section)
CHIP ERASE COMPLETE
GO TO
ERROR RECOVERY
DQ[5] Error Exit
Normal Exit
When the Automatic Erase algorithm is complete,
the device returns to the array Read mode. Sev-
eral methods are provided to allow the host to
determine the status of the erase operation, as
described in the Write Operation Status section.
Figure 5 illustrates the chip erase procedure.
Sector Erase Command
The Sector Erase command sequence consists
of two unlock cycles, followed by the Erase com-
mand, two additional unlock cycles and then the
sector erase data cycle, which specifies the sec-
tor to be erased. As described later in this sec-
tion, multiple sectors can be specified for erasure
with a single command sequence. During sector
erase, all specified sectors are erased sequen-
tially. The data in sectors not specified for era-
sure, as well as the data in any protected sectors,
even if specified for erasure, is not affected by the
sector erase operation.
The Sector Erase command sequence starts the
Automatic Erase algorithm, which preprograms
and verifies the specified unprotected sectors for
an all zero data pattern prior to electrical erase.
The device then provides the required number of
START
Enable Fast
Programming
Issue UNLOCK BYPASS
Command
YES
NO
Unlock Bypass
Mode
Issue UNLOCK BYPASS
PROGRAM Command
Issue NORMAL PROGRAM
Command
Check Programming Status
(See Write Operation Status
Section)
YES
NO
Last Word/Byte
Done
YES
NO
Setup Next Address/Data for
Program Operation
YES
NO
Unlock Bypass
Mode
Issue UNLOCK BYPASS
RESET Command
PROGRAMMING
COMPLETE
GO TO ERROR
RECOVERY PROCEDURE
DQ[5] Error Exit
Programming Verified
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29LV400BF90 | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF90I | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT55 | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT55I | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT70 | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29LV400BF90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BF90I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT55I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
| HY29LV400BT70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory |
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