參數(shù)資料
型號(hào): HY29LV320BT-12I
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 32 Mbit (2M x 16) Low Voltage Flash Memory
中文描述: 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝: TSOP-48
文件頁(yè)數(shù): 35/44頁(yè)
文件大?。?/td> 323K
代理商: HY29LV320BT-12I
35
r1.3/May 02
HY29LV320
Notes:
1. PA = Program Address, PD = Program Data, D
is the true data at the program address.
2. V
CC
shown only to illustrate t
VCS
measurement references. It cannot occur as shown during a valid command sequence.
Figure 19. Program Operation Timings
Addresses
CE#
t
WC
0x555
PA
PA
PA
OE#
t
AS
t
AH
t
WPH
t
WP
t
GHWL
t
CS
WE#
Data
t
DS
t
DH
0xA0
PD
Status
t
WHWH1
RY/BY#
t
BUSY
t
RB
t
VCS
V
CC
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
D
OUT
t
CH
Figure 20. Accelerated Programming Voltage Timings
ACC
V
HH
V
IL
or V
IH
t
VHH
t
VHH
V
IL
or V
IH
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