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參數(shù)資料
| 型號： | HY29F800 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| 中文描述： | 8兆位（1Mx8/512Kx16），5伏只，閃存 |
| 文件頁數(shù)： | 4/40頁 |
| 文件大?。?/td> | 509K |
| 代理商： | HY29F800 |
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4
Rev. 4.2/May 01
HY29F800
SIGNAL DESCRIPTIONS
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MEMORY ARRAY ORGANIZATION
The 1 Mbyte Flash memory array is organized into
nineteen blocks called
sectors
(S0, S1, . . . , S18).
A sector is the smallest unit that can be erased
and which can be protected to prevent accidental
or unauthorized erasure. See the
‘
Bus Operations
’
and
‘
Command Definitions
’
sections of this docu-
ment for additional information on these functions.
In the HY29F800, four of the sectors, which com-
prise the
boot block
, vary in size from 8 to 32
Kbytes (4 to 16 Kwords), while the remaining fif-
teen sectors are uniformly sized at 64 Kbytes (32
Kwords). The boot block can be located at the
bottom of the address range (HY29F800B) or at
the top of the address range (HY29F800T).
Table 1 defines the sector addresses and corre-
sponding address ranges for the top and bottom
boot block versions of the HY29F800.
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F800BG-70 | x8/x16 Flash EEPROM |
| HY29F800BG-90 | x8/x16 Flash EEPROM |
| HY29F800BR-12 | x8/x16 Flash EEPROM |
| HY29F800BR-55 | x8/x16 Flash EEPROM |
| HY29F800BR-70 | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F800A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABG-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABG-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABG-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ABG-55I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
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