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參數(shù)資料
| 型號： | HY29F400BG55 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| 中文描述： | 4兆位（512Kx8/256Kx16）5伏只閃存 |
| 文件頁數(shù)： | 17/40頁 |
| 文件大?。?/td> | 509K |
| 代理商： | HY29F400BG55 |
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17
Rev. 5.2/May 01
HY29F400
While the Automatic Erase algorithm is operating,
successive read cycles at any address cause
DQ[6] to toggle. DQ[6] stops toggling when the
erase operation is complete or when the device is
placed in the Erase Suspend mode. The host may
use DQ[2] to determine which sectors are erasing
or erase-suspended (see below). After an Erase
command sequence is written, if all sectors se-
lected for erasing are protected, DQ[6] toggles for
approximately 100 μs, then returns to reading ar-
ray data. If at least one selected sector is not
protected, the Automatic Erase algorithm erases
the unprotected sectors, and ignores the selected
sectors that are protected.
Note:
In the current version of the device, unreliable
testing of DQ[6] for erase completion may occur if the
test is done before the Sector Erase Timer (DQ[3]) has
expired. It is recommended that for erase operations
the DQ[6] test be delayed for a minimum of 100 μs or
until after DQ[3] switches from a
‘
0
’
to a
‘
1
’
. This anomaly
will be corrected in a future revision of the device.
DQ[2] - Toggle Bit II
Toggle Bit II, DQ[2], when used with DQ[6], indi-
cates whether a particular sector is actively eras-
ing or whether that sector is erase-suspended.
Toggle Bit II is valid after the rising edge of the
final WE# pulse in the command sequence. The
device toggles DQ[2] with each OE# or CE# read
cycle.
DQ[2] toggles when the host reads at addresses
within sectors that have been selected for erasure,
but cannot distinguish whether the sector is ac-
tively erasing or is erase-suspended. DQ[6], by
comparison, indicates whether the device is ac-
tively erasing or is in Erase Suspend, but cannot
distinguish which sectors are selected for erasure.
Thus, both status bits are required for sector and
mode information.
Figure 8 illustrates the operation of Toggle Bits I
and II.
DQ[5] - Exceeded Timing Limits
DQ[5] is set to a
‘
1
’
when the program or erase
time has exceeded a specified internal pulse count
limit. This is a failure condition that indicates that
the program or erase cycle was not successfully
completed. DQ[5] status is valid only while DQ[7]
or DQ[6] indicate that the Automatic Algorithm is
in progress.
The DQ[5] failure condition will also be signaled if
the host tries to program a
‘
1
’
to a location that is
previously programmed to
‘
0
’
, since only an erase
operation can change a
‘
0
’
to a
‘
1
’
.
For both of these conditions, the host must issue
a Read/Reset command to return the device to
the Read mode.
DQ[3] - Sector Erase Timer
After writing a Sector Erase command sequence,
the host may read DQ[3] to determine whether or
not an erase operation has begun. When the
sector erase time-out expires and the sector erase
operation commences, DQ[3] switches from a
‘
0
’
to a
‘
1
’
. Refer to the
“
Sector Erase Command
”
section for additional information. Note that the
START
Read DQ[7:0]
at Valid Address (Note 1)
DQ[7] = Data
NO
YES
PROGRAM/ERASE
COMPLETE
DQ[5] = 1
NO
YES
Test for DQ[7] = 1
for Erase Operation
Read DQ[7:0]
at Valid Address (Note 1)
DQ[7] = Data
(Note 2)
NO
YES
Test for DQ[7] = 1
for Erase Operation
PROGRAM/ERASE
EXCEEDED TIME ERROR
Notes:
1. During programming, the program address.
During sector erase, an address within any non-protected sector
scheduled for erasure.
During chip erase, an address within any non-protected sector.
2. Recheck DQ[7] since it may change asynchronously at the same time
as DQ[5].
Figure 7. Data# Polling Test Algorithm
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| HY29F400BG90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BG-90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
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