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9
Rev. 6.1/May 01
HY29F080
START
NOTE: All sectors must be
previously protected.
Set: TRYCNT = 1
Set: A9 = CE# = OE# = V
ID
Set: RESET# = V
IH
WE# = V
IL
Wait t
WPP2
Set:
A9 = V
OE# = CE# = V
IL
Read Data
Data = 0x00
NGRP = 7
YES
TRYCNT = 1000
NO
Increment TRYCNT
NO
YES
DEVICE FAILURE
NO
YES
Remove V
ID
from A9
SECTOR UNPROTECT
COMPLETE
APPLY V
CC
Set Sector Group Address:
A[19:17] = Group NGRP
A0 = A6 = V
IL
A1 = V
IH
NGRP = NGRP + 1
Set: NGRP = 0
WE# = V
IH
Figure 2. Sector Group Unprotect Procedure
START
RESET# = V
(All protected sector groups
become unprotected)
Perform Program or Erase
Operations
RESET# = V
(All previously protected
sector groups return to
protected state)
TEMPORARY SECTOR
UNPROTECT COMPLETE
Figure 3. Temporary Sector Group Unprotect
A read cycle at address 0xXXX01 returns the
device code (HY29F080 = 0xD5).
A read cycle containing a sector group address
(Table 1) in A[19:17] and the address 0x02 in
A[7:0] returns 0x01 if that sector is protected,
or 0x00 if it is unprotected.
相關PDF資料 |
PDF描述 |
|---|---|
| HY29F080T-12 | x8 Flash EEPROM |
| HY29F080T-70 | x8 Flash EEPROM |
| HY29F080T-90 | x8 Flash EEPROM |
| HY29F400BT55 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400TT45 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F080R-90E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080T12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080T-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080T-12E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080T-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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