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    參數(shù)資料
    型號(hào): HY29F080G70
    廠商: Hynix Semiconductor Inc.
    英文描述: 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
    中文描述: 8兆位(1米× 8),5伏只,閃存
    文件頁數(shù): 33/38頁
    文件大?。?/td> 366K
    代理商: HY29F080G70
    33
    Rev. 6.1/May 01
    HY29F080
    AC CHARACTERISTICS
    Alternate CE# Controlled Erase/Program Operations
    Notes:
    1. Not 100% tested.
    2. Typical program and erase times assume the following conditions: 25
    °
    C, V
    = 5.0 volts, 100,000 cycles. In addition,
    programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
    tions of 90
    °
    C, V
    = 4.5 volts, 100,000 cycles.
    3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
    command. See Table 5 for further information on command sequences.
    4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes
    are programmed to 0x00 before erasure.
    5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
    bytes program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum
    byte program time specified is exceeded. See Write Operation Status section for additional information.
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