參數(shù)資料
型號: HY27US16561M
廠商: Hynix Semiconductor Inc.
英文描述: 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
中文描述: 片256Mbit(32Mx8bit / 16Mx16bit)NAND閃存
文件頁數(shù): 43/44頁
文件大?。?/td> 733K
代理商: HY27US16561M
Rev 0.7 / Oct. 2004
43
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
MARKING INFORMATION -
TSOP1/WSOP
Packag
Marking Example
TSOP1
/
WSOP
K
O
R
H
Y
2
7
x
S
x
x
5
6
1
M
x
x
x
x
Y
W
W
x
x
- hynix
- KOR
- HY27xSxx121mTxB
HY:
HYNIX
27:
NAND Flash
x:
Power Supply
S:
Classification
xx:
Bit Organization
56:
Density
1:
Mode
M:
Version
x:
Package Type
x:
Package Material
x:
Operating Temperature
x:
Bad Block
- Y:
Year (ex: 4=year 2004, 05= year 2005)
- ww:
Work Week (ex: 12= work week 12)
- xx:
Process Code
Note
- Capital Letter
- Small Letter
: Hynix Symbol
: Origin Country
: U(2.7V~3.6V), S(1.7V~2.2V)
: Single Level Cell+Single Die
: 08(x8), 16(x16)
: 256Mb
: 1nCE & 1R/nB; CE don't care
: 1st Generation
: T(TSOP1), V(WSOP)
: Blank(Normal), P(Lead Free)
: C(0
~70
), E(-25
~85
)
I(-40
~85
)
: B(Included Bad Block), S(1~5 Bad Block),
P(All Good Block)
: Fixed Item
: Non-fixed Item
: Part Number
相關PDF資料
PDF描述
HY27US561M 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
HY27SS16561M 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
HY27US08561M 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
HY27SSxxx 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27SS08121M 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
相關代理商/技術參數(shù)
參數(shù)描述
HY27US561M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
HY27USXXX 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY29DL162 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16M(X8/X16)|3.0V DUAL BANK|70|NOR FLASH - 16M
HY29DL162BF-12 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
HY29DL162BF-12I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory