參數(shù)資料
型號: HY27UA081G1M
廠商: Hynix Semiconductor Inc.
英文描述: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述: 1Gbit的(128Mx8bit / 64Mx16bit)NAND閃存
文件頁數(shù): 27/43頁
文件大小: 729K
代理商: HY27UA081G1M
Rev 0.5 / Oct. 2004
27
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Table 13: DC Characteristics, 3.3V Device and 1.8V Device
Symbol
Parameter
Test Condition
3.3V
1.8V
Unit
Min
Typ
Max
Min
Typ
Max
I
CC1
Operating
Current
Sequential Read
t
RLRL
minimum
CE=V
IL
, I
OUT
= 0 mA
-
15
30
-
10
20
mA
I
CC2
Program
-
-
15
30
-
10
20
mA
I
CC3
Erase
-
-
15
30
-
10
20
mA
I
CC4
Stand-by Current (TTL)
CE=V
IH
, WP=0V/
V
CC
-
-
1
-
-
1
mA
I
CC5
Stand-By Current (CMOS)
CE=V
CC
-0.2, WP=0/
V
CC
-
20
100
-
20
100
uA
I
LI
Input Leakage Current
V
IN
= 0 to V
CC
max
-
-
±
20
-
-
±
20
uA
I
LO
Output Leakage Current
V
OUT
= 0 to V
CC
max
-
-
±
20
-
-
±
20
uA
V
IH
Input High Voltage
-
2.0
-
V
CC
+0.3
V
CC
+0.4
V
CC
+0.3
V
V
IL
Input Low Voltage
-
-0.3
-
0.8
-0.3
0.4
V
V
OH
Output High Voltage Level
I
OH
= -400uA
2.4
-
-
V
CC
-0.1
-
-
V
V
OL
Output Low Voltage Level
I
OL
= 2.1mA
-
-
0.4
-
-
0.1
V
I
OL
(RB)
Output Low Current (RB)
V
OL
= 0.1V
8
10
-
3
4
-
mA
V
LKO
V
DD
Supply Voltage
(Erase and Program lockout)
-
-
-
2.5
-
-
1.5
V
相關(guān)PDF資料
PDF描述
HY27UA161G1M 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UA1G1M 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UAxxx 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SS08561M 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
HY27SS561M 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27UA161G1M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UA1G1M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UAXXX 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2A 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
HY27UF081G2A-C 制造商:SK Hynix Inc 功能描述: