參數(shù)資料
型號: HY27SS08561M
廠商: Hynix Semiconductor Inc.
英文描述: 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
中文描述: 片256Mbit(32Mx8bit / 16Mx16bit)NAND閃存
文件頁數(shù): 38/44頁
文件大小: 733K
代理商: HY27SS08561M
Rev 0.7 / Oct. 2004
38
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Ready/Busy Signal Electrical Characteristics
Figures 32, 33 and 34 show the electrical characteristics for the Ready/Busy signal. The value required for the resistor
R
P
can be calculated using the following equation:
where I
L
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
P
max is determined by the
maximum value of tr.
Figure 32. Ready/Busy AC Waveform
Figure 34. Ready/Busy Load Circuit
ready
V
OL
Vcc
V
OH
tr
tf
busy
Vcc
Device
Vss
Rp
ibusy
RB
Open Drain Output
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HY27SS561M 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
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