參數(shù)資料
型號: HY27SA161G1M
廠商: Hynix Semiconductor Inc.
英文描述: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述: 1Gbit的(128Mx8bit / 64Mx16bit)NAND閃存
文件頁數(shù): 33/43頁
文件大小: 729K
代理商: HY27SA161G1M
Rev 0.5 / Oct. 2004
33
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Note: Refer to table(To see Page 21) for the values of the manufacture and device codes.
Figure 26. Read Electronic Signature AC Waveform
Figure 27. Read Read A/ Read B Operation AC Waveform
I/O
RE
CE
Man.
code
90h
Device
code
Don't
Care
Don't
Care
00h
WE
ALE
CLE
Read Electronic
Signature Command
1st Cycle
Address
Manufacturer and
Device Code
Reserved For
Future Use
tALLRL1
tRLQV
(Read ES Access time)
I/O
RE
CE
WE
ALE
CLE
RB
Busy
Data Output
from Address N to Last Byte or Word in Page
Data
N
Add.N
cycle 1
Add.N
cycle 2
Add.N
cycle 3
Add.N
cycle 4
00h or
01h
Data
N+1
Data
N+2
Data
Last
Address N Input
Command
Code
tEHEL
tWHWL
tWHBL
tWHBH
tALLRL2
tRLRL
(Read Cycle time)
tRHQZ
tRHBL
tRLRH
tBLBH1
tEHQZ
tEHBH
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