參數(shù)資料
型號(hào): HY27SA081G1M
廠商: Hynix Semiconductor Inc.
英文描述: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述: 1Gbit的(128Mx8bit / 64Mx16bit)NAND閃存
文件頁數(shù): 16/43頁
文件大小: 729K
代理商: HY27SA081G1M
Rev 0.5 / Oct. 2004
16
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Figure 12. Sequential Row Read Operation
Figure 13. Sequential Row Read Block Diagrams
Busy
Busy
Busy
tBLBH1
(Read Busy time)
tBLBH1
tBLBH1
Address Inputs
I/O
00h/
01h/50h
1st
Page Output
2nd
Page Output
Nth
Page Output
Command
Code
RB
Area A
(1
st
half Page)
Area B
Area C
Read A Command, x8 Devices
(2
nd
half Page) (Spare)
Block
N
th
Page
Read B Command, x8 Devices
Area A
(1
st
half Page)
Area B
(2
nd
half Page)
Area C
(Spare)
Block
N
th
Page
(main area)
Area C
(Spare)
Read A Command, x16 Devices
2
nd
Page
N
th
Page
Block
Area A
Area A/B
Area C
(Spare)
Read C Command, x8/x16 Devices
N
th
Page
Block
2
nd
Page
1
st
Page
2
nd
Page
1
st
Page
Area A
1
st
Page
2
nd
Page
1
st
Page
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相關(guān)代理商/技術(shù)參數(shù)
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