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參數(shù)資料
| 型號： | HX6409TSHC |
| 英文描述： | x9 Synchronous FIFO |
| 中文描述： | X9熱賣同步FIFO |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 156K |
| 代理商： | HX6409TSHC |
5
HX6409/HX6218/HX6136
VDD
Supply Voltage Range (2)
-0.5
7.0
V
VPIN
Voltage on Any Pin (2)
-0.5
VDD+0.5
V
TSTORE
Storage Temperature (Zero Bias)
-65
150
°
C
°
C
TSOLDER
Soldering Temperature (5 Seconds)
270
PD
Maximum Power Dissipation (3)
2.5
W
IOUT
DC or Average Output Current
25
mA
VPROT
Θ
JC
TJ
ESD Input Protection Voltage (4)
2000
V
Thermal Resistance (Jct-to-Case)
5
°
C/W
°
C
Junction Temperature
175
VDD
Supply Voltage (referenced to VSS)
4.5
5.0
5.5
V
TA
Ambient Temperature
-55
25
125
°
C
VPIN
Voltage on Any Pin (referenced to VSS)
-0.3
VDD+0.3
V
Parameter
Parameter
Symbol
CAPACITANCE
(1)
Symbol
Test Conditions
Min
Max
Units
(1) This parameter is tested during initial design characterization only.
RECOMMENDED OPERATING CONDITIONS
Symbol
Max
Typ
Parameter
Min
Units
DATA RETENTION CHARACTERISTICS
Parameter
Symbol
Min
Max
Units
Rating
CI
Input Capacitance
7
pF
VI=VDD or VSS, f=1 MHz
CO
Output Capacitance
9
pF
VIO=VDD or VSS, f=1 MHz
Units
Typical
(1)
Worst Case
Min
Max
Test Conditions
(1) Typical operating conditions: TA= 25
°
C, pre-radiation.
(2) Worst case operating conditions: TC= -55
°
C to +125
°
C, post total dose at 25
°
C.
VDR
Data Retention Voltage
2.5
V
IDR
Data Retention Current
500
μ
A
NCS=VDR
VI=VDR or VSS
NCS=VDD=VDR
VI=VDR or VSS
Worst Case
(2)
Typical
(1)
Description
(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not
implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
(2) Voltage referenced to VSS.
(3) FIFO power dissipation (IDDSB + IDDOP) plus FIFO output driver power dissipation due to external loading must not exceed this specification.
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.
ABSOLUTE MAXIMUM RATINGS
(1)
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