參數(shù)資料
型號(hào): HX6136FSRC
英文描述: x36 Synchronous FIFO
中文描述: x36同步FIFO
文件頁(yè)數(shù): 4/16頁(yè)
文件大?。?/td> 156K
代理商: HX6136FSRC
HX6409/HX6218/HX6136
4
Total Dose
1x10
6
rad(SiO
2
)
rad(Si)/s
Transient Dose Rate Upset
1x10
9
1x10
11
Transient Dose Rate Survivability
rad(Si)/s
Soft Error Rate
<1x10
-10
upsets/bit-day
Neutron Fluence
1x10
14
N/cm
2
Parameter
Limits (2)
Test Conditions
RADIATION-HARDNESS RATINGS (1)
Units
T
A
=25
°
C
RADIATION CHARACTERISTICS
Total Ionizing Radiation Dose
All FIFO configurations will meet all stated functional and
electrical specifications over the entire operating tempera-
ture range after the specified total ionizing radiation dose.
All electrical and timing performance parameters will re-
main within specifications after rebound at VDD = 5.5 V
and T = 125
°
C extrapolated to ten years of operation. Total
dose hardness is assured by wafer level testing of process
monitor transistors and product using 10 KeV X-ray and
radiation sources. Transistor gate threshold shift correla-
tions have been made between 10 KeV X-rays applied at
a dose rate of 1x10
5
rad(SiO
2
)/min at T = 25
°
C and gamma
rays (Cobalt 60 source) to ensure that wafer level X-ray
testing is consistent with standard military radiation test
environments.
Transient Pulse Ionizing Radiation
Each FIFO configuration is capable of writing, reading
and retaining stored data during and after exposure to a
transient ionizing radiation pulse of <50 ns duration up to
1x10
9
rad(Si)/s, when applied under recommended oper-
ating conditions. To ensure validity of all specified perfor-
mance parameters before, during, and after radiation
(timing degradation during transient pulse radiation (tim-
ing degradation during transient pulse radiation is
10%),
it is suggested that stiffening capacitance be placed near
the package VDD and VSS, with a maximum inductance
between the package (chip) and stiffening capacitor of
0.7 nH per part. If there are no operate-through or valid
stored data requirements, typical circuit board mounted
de-coupling capacitors are recommended.
(1) Device will not latch up due to any of the specified radiation exposure conditions.
(2) Operating conditions (unless otherwise specified): VDD=4.5 V to 5.5 V, TA=-55
°
C to 125
°
C.
1 MeV equivalent energy,
Unbiased, T
A
=25
°
C
T
=125
°
C, Adams 90%
worst case environment
Pulse width
50 ns, X-ray,
VDD=6.0 V, T
A
=25
°
C
Pulse width
50 ns
Each FIFO will meet any functional or electrical specifica-
tion after exposure to a radiation pulse of
50 ns duration
up to 1x10
11
rad(Si)/s, when applied under recommended
operating conditions. Note the current conducted during
the pulse by the inputs, outputs and power supply may
significantly exceed the normal operating levels. The appli-
cation design must accommodate these effects.
Neutron Radiation
Each FIFO configuration will meet any functional or timing
specification after a total neutron fluence of up to 1x10
14
cm
-
2
applied under recommended operating or storage condi-
tions. This assumes an equivalent neutron energy of 1 MeV.
Soft Error Rate
This FIFO configuration has a soft error rate (SER) perfor-
mance of <1x10
-10
upsets/bit-day, under recommended
operating conditions. This hardness level is defined by the
Adams 90% worst case cosmic ray environment.
Latchup
This FIFO configuration will not latch up due to any of the
above radiation exposure conditions when applied under
recommended operating conditions. Fabrication with the
SIMOX substrate with its oxide isolation ensure latchup
immunity.
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