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| 型號(hào)： | HX6136FSHT |
| 英文描述： | x36 Synchronous FIFO |
| 中文描述： | x36同步FIFO |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 156K |
| 代理商： | HX6136FSHT |
11
HX6409/HX6218/HX6136
QUALITY AND RADIATION HARDNESS
ASSURANCE
Honeywell maintains a high level of product integrity through
process control, utilizing statistical process control, a com-
plete “Total Quality Assurance System,” a computer data
base process performance tracking system and a radiation
hardness assurance strategy.
The radiation hardness assurance strategy starts with a
technology that is resistant to the effects of radiation.
Radiation hardness is assured on every wafer by irradiat-
ing test structures as well as SRAM product, and then
monitoring key parameters which are sensitive to ionizing
radiation. Conventional MIL-STD-883 TM 5005 Group E
testing, which includes total dose exposure with Cobalt 60,
may also be performed as required. This Total Quality
approach ensures our customers of a reliable product by
engineering in reliability, starting with process develop-
ment and continuing through product qualification and
screening.
SCREENING LEVELS
Honeywell offers several levels of device screening to
meet your system needs. “Engineering Devices” are avail-
able with limited performance and screening for bread-
boarding and/or evaluation testing. Hi-Rel Level B and S
devices undergo additional screening per the require-
ments of MIL-STD-883. As a QML supplier, Honeywell also
offers QML Class Q and V devices per MIL-PRF-38535
and are available per the applicable Standard Microcir-
cuits Drawing (SMD). QML devices offer ease of procure-
ment by eliminating the need to create detailed specifica-
tions and offer benefits of improved quality and cost
savings through standardization.
RELIABILITY
Honeywell understands the stringent reliability requirements
for space and defense systems and has extensive experi-
ence in reliability testing on programs of this nature. This
experience is derived from comprehensive testing of VLSI
processes. Reliability attributes of the RICMOS
TM
process
were characterized by testing specially designed irradiated
and non-irradiated test structures from which specific failure
mechanisms were evaluated. These specific mechanisms
included, but were not limited to, hot carriers, electromigra-
tion and time dependent dielectric breakdown. This data was
then used to make changes to the design models and
process to ensure more reliable products.
In addition, the reliability of the RICMOS process and
product in a military environment was monitored by testing
irradiated and non-irradiated circuits in accelerated dy-
namic life test conditions. Packages are qualified for prod-
uct use after undergoing Group B & D testing as outlined
in MIL-STD-883, TM 5005, Class S. The product is quali-
fied by following a screening and testing flow to meet the
customer’s requirements. Quality conformance testing is
performed as an option on all production lots to ensure the
ongoing reliability of the product.
High Z = 2.9V
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AA
AAAA
AA
AA
AA
AAAA
0 V
3 V
0.5 V
VDD-0.5 V
VDD/2
AAAAA
AA
AAAAA
AA
AA
VDD-0.4V
0.4 V
High Z
3.4 V
2.4 V
High Z
VDD/2
0.4 V
High Z
3.4 V
2.4 V
High Z
TTL I/O Configuration
Input
Levels*
Output
Sense
Levels
CMOS I/O Configuration
High Z = 2.9V
* Input rise and fall times <1 ns/V
TESTER AC TIMING CHARACTERISTICS
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