參數(shù)資料
型號: HV311LG
廠商: SUPERTEX INC
元件分類: 電源管理
英文描述: Hotswap, Controllers with Circuit Breaker
中文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
封裝: SOIC-8
文件頁數(shù): 6/21頁
文件大?。?/td> 664K
代理商: HV311LG
6
HV301/HV311
From the calculated resistor values the OV and UV start up
threshold voltages can be calculated as follows:
UV
V
V
R
+
R
+
R
R
R
OV
V
V
R
R
R
R
ON
UVH
EEUV on
ON
OVL
EEOV on
=
=
=
×
+
=
=
=
×
+
+
1 26
.
2
3
1
2
3
1 16
.
3
2
1
3
(
)
(
)
Where |
V
| and |
V
|
are Under & Over Voltage Start
Up Threshold points relative to V
EE
.
Then
V
R
R
R
R
R
V
V
R
R
R
R
V
EEUV on
EEUV on
EEOV on
EEOV on
(
)
(
)
(
)
(
)
.
.
.
.
.
.
.
.
.
.
.
.
=
×
+
+
+
=
×
+
+
+
=
=
×
+
+
=
×
+
+
1 26
1
2
3
2
3
1 26
487
6 81
k
9 76
k
6 81
9 76
38 29
1 16
1
2
3
3
1 16
487
6 81
9 76
9 76
k
k
k
V
And
k
k
k
k
=
59 85
.
V
Therefore, the circuit will start when the input supply voltage is
in the range of 38.29V to 59.85V.
Design Information, cont’d.
Undervoltage/Overvoltage Operation
Programming Inrush and I
CB
(Circuit Breaker)
Method 1: Inrush independent of I
CB
Max Vt of a typical
power FET
GND
V
IN
Pass
Transistor
OFF
ON
UV
OFF
UV
ON
OV
OFF
OV
ON
V
SENSE
+ K –
+
+
5k
2.5
μ
A
7.5
μ
A
10
μ
A
10V
10n
0
μ
A
0
μ
A
RAMP
GATE
7.5
μ
A
Vgs
Cgs
Cgd
– C2
inrush
Rsense=12.5m
Cdb
(DRAIN)
Cload=100
μ
F
Vin
dv
df
on Cramp constant
gm(Vgs-Vt)
V
SENSE
VSENSE
5k
10V
10n=Cramp
RAMP
GATE
1 : 2
Isink
10
μ
A
Internal Circuitry
mirror
C2
0.75nF
Rsense
Vsense
Cload
48V
10
μ
A
1.
Choose circuit breaker trip point eg. 8A as follows
Rsense =
Choose inrush level, for example Inrush=1A
3.
Calculate Isink
Inrush*Rsense
5
k
2.5 A
4.
Calculate C discharge limit
= 10 A-Isink =7.5 A (typical)=iC
4a. Adjust for Auto-retry disable, if used
Vt
R
e.g.
4V
2.5M
= 1.6 A
e.g. iC =10 A-Isink-1.6 A
2
max
disable
100
100
8
12 5
2
1
12 5
5
k
mV
I
mV
m
A
m
CB
=
=
=
=
×
=
.
.
.
In this example we assume Auto-retry is enabled so
ignore 1.6 A,
iC = 10 A-Isink =7.5 A
5.
Note: i=C
iC =C
Inrush=C
Note V is fixed and V
dv
dt
is constant during limiting
across C
=
across C (as they share a
common node and their other terminals are fixed during inrush)
Inrush=
by conservation of charge on RAMP Node iC =7.5 A
Inrush=
2
load
RAMP
dv
dt
load
×
×
=
×
C
μ ×
7 5
C
dv
dt
dv
dt
dv
dt
iC
C
Inrush
C
load
iC
C
load
load
2
2
2
2
Inrush
nF
A
load
2
7 5
7 5
.
100
1
μ ×
=
μ ×
C =
=750pF=0.75nF
Note that RAMP is protected by AC divider and Gate
is clamped internally.
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