參數(shù)資料
型號(hào): HV301LG
廠(chǎng)商: SUPERTEX INC
元件分類(lèi): 電源管理
英文描述: Hotswap, Controllers with Circuit Breaker
中文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
封裝: SOIC-8
文件頁(yè)數(shù): 8/21頁(yè)
文件大?。?/td> 664K
代理商: HV301LG
8
HV301/HV311
Start up Overload Protection
Start up must be achieved within a nominal 100ms as indicated
by the PWRGD pin transition to the active state or the circuit will
reset and an automatic restart will initiate. If there is an output
overload or short circuit during start up, the circuit will be in
current limit for the 100ms time limit (in servo mode). In feedback
capacitor mode the circuit breaker will shutdown the pass FET
before 100ms.
Circuit Breaker
The circuit breaker will trip in less than 5
μ
s when the voltage on
the SENSE pin reaches a nominal 100mV. A resistor in series
with the SENSE pin and a capacitor connected between the
SENSE and V
pins may be added to delay the rate of voltage
rise on the SENSE pin, thus permitting a current overshoot and
delaying Circuit Breaker activation.
Automatic Restart
The automatic restart delay time is directly proportional to the
capacitance at the RAMP pin. Automatic restart sequence is
activated whenever the 100ms timeout is reached during start up
or the circuit breaker is tripped.
These equations assume that the load is purely capacitive and
the following definitions apply.
C
RAMP
is the external capacitor connected to the RAMP pin.
I
is the output current from the RAMP pin, nominally
10
μ
A, when the voltage drop on R
SENSE
resistor is zero.
V
is the internally regulated supply voltage and can range
from 8.5V to 12V.
V
is the gate threshold voltage of the external pass
transistor and may be obtained from its datasheet.
V
is the external pass transistor gate-source voltage
required to obtain the limit current. It is dependent on the
pass transistor’s characteristics and may be obtained from
the transfer characteristics on the transistor datasheet.
g
is the transconductance of the external pass transistor
and may be obtained from its datasheet.
R
FB
is the internal feedback resistor and is nominally 5k
.
I
is the load current when the voltage drop on the R
SENSE
resistor is 50mV.
These equations may be used to calculate the minimum value of
C
RAMP
for the most critical system performance characteristics.
For maximum contact bounce duration protection choose a
value for
t
POR
and use the following equation:
C
t
I
V
RAMP
POR
2 4
RAMP
GS th
=
×
+
If control of PWRGD active delay is the critical system param-
eter, then choose a value for
t
PWRGD
and use the following
equation:
C
t
I
V
V
RAMP
PWRGD
RAMP
INT
GS
=
×
(
)
limit
1 2
Design Information, cont’d.
Auto-retry can be approximated as a
555-timer with 2.5
μ
A charge up and
charge down currents through 8V, to
a count of 256. Therefore,
T
=2 8 256
2.5 A
C
AUTORETRY
ramp
× ×
×
Due to the 2.5
μ
A max charge current a resistor which draws
more than 2.5
μ
A below 8V will disable the autoretry. Try to
keep this resistor as big as possible, e.g. 2.5M
, for most
MOSFETs with max V
of 4V this will vary the 10
μ
A Ramp
current source by only 4/2.5M
=1.6
μ
A.
2.5
μ
A
2.5
μ
A
C
ramp
e.g. 2 8 256
2.5 A
Ion=16.4s
× ×
×
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