
VOLTAGE RATING [25°C]
Reverse
Voltage
(V
R
) – Volts
I
R
= 10μA
Part type
100V
HUM2001
500V
HUM2005
1000V
HUM2010
1500V
HUM2015
2000V
HUM2020
Microsemi
Page 1
Copyright
2000
MSCXXXX.PDF 2002-08-08
W
M
.
C
HUM2001/HUM2020 SERIES
Pin Diode High Power Stud
KEY FEATURES
High Power Stud Mount Package.
High Zero Bias Impedance
Very Low Inductance and
Capacitance.
No Internal Lead Straps.
Small Mechanical Outline.
MRI Applications.
High Power Antenna Switching.
APPLICATIONS/BENEFITS
DESCRIPTION
With high isolation, low loss, and low distortion characteristics, this
Microsemi Power PIN diode is perfect for the high power switching
applications where size and power handling capability are critical.
Its advantages also include the low forward bias resistance and high zero
bias impedance that are essential for low loss, high isolation and wide
bandwidth performance.
Hermetically sealed, SOGO passivated PIN chips with full-faced metallurgical
bonds on both sides to achieve high reliability and high surge capability.
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
Style “D”
Insulated Stud
(UNLESS OTHERWISE SPECIFIED)
Parameter
Style “C”
Stud
Round Axial Leads
Style “B”
Style “SM”
Melf
Maximum Ratings @ 25oC
TYPE
HUM2005
HUM2010
Symbol
HUM2001
HUM2015
HUM2020
Unit
Maximum Reverse
Voltage
Average Power
Dissipation
@ Stud =50°C
Non-Repetitive
Sinusoidal Surge
Current (8.3 ms)
Storage
Temperature
Range
Operating
Temperature
Range
Thermal resistance
Junction-to Case
“C” Stud only
T
RWM
100
500
1000
1500
2000
V
I
O
13
13
13
13
13
W
I
100
100
100
100
100
A
T
STG
-65 to
+175
-65 to
+175
-65 to
+175
-65 to
+175
-65 to
+175
°C
T
STG
-55 to
+150
-55 to
+150
-55 to
+150
-55 to
+150
-55 to
+150
°C
R
θ
JC
7.5
7.5
7.5
7.5
7.5
°C/W
H
U
M
2
0
1
0
-
2
0
2
0