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參數(shù)資料
| 型號(hào)： | HUFA76409D3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| 中文描述： | 18 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 206K |
| 代理商： | HUFA76409D3S |
2001 Fairchild Semiconductor Corporation
HUFA76409D3, HUFA76409D3S Rev. A
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
100
μ
s
1
10
100
1
10
0.1
100
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
T
J
= MAX RATED T
C
= 25
o
C
SINGLE PULSE
10
60
0.01
0.1
1
10
100
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
5
10
15
20
1.0
3.0
4.0
5.0
0
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
2.0
5
10
15
20
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
V
GS
= 3.5V
T
C
= 25
o
C
V
GS
= 5V
V
GS
= 10V
50
60
80
2
4
6
8
10
40
I
D
= 7A
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
I
D
= 17A
I
D
= 12A
70
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
0.5
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 18A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
HUFA76409D3, HUFA76409D3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUFA76409D3 | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:EZ5015; No. of Contacts:4; Connector Shell Size:20; Connecting Termination:Spring Cage; Circular Shell Style:Straight Plug; Cable Gland Material:Plastic RoHS Compliant: Yes |
| HUFA76409P3 | 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUFA76409D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 18A I(D) | TO-252AA |
| HUFA76413D3 | 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUFA76413D3S | 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUFA76409D3ST | 功能描述:MOSFET 17a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76409D3ST_B76008A | 制造商:Fairchild Semiconductor Corporation 功能描述:FSCHUFA76409D3ST_B76008A N- CHANNEL MOSF |
| HUFA76409P3 | 功能描述:MOSFET 17a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76409T3ST | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUFA76413D3 | 功能描述:MOSFET 20a 60V 0.056 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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