參數(shù)資料
型號： HUFA75639S3S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 56 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 5/10頁
文件大?。?/td> 221K
代理商： HUFA75639S3S
2001 Fairchild Semiconductor Corporation
HUFA75639G3, HUFA75639P3, HUFA75639S3S Rev. B
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
O
V
GS
= 10V, I
D
= 56A
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
T
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
0.9
1.2
B
N
T
J
, JUNCTION TEMPERATURE (
o
C)
1.0
1.1
-80
-40
0
40
80
120
160
200
I
D
= 250
μ
A
0
500
1000
1500
2000
2500
3000
0
10
20
30
40
50
60
C
ISS
C
RSS
C
OSS
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
0
2
4
6
8
10
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
V
G
,
I
D
= 56A
I
D
= 37A
I
D
= 18A
WAVEFORMS IN
V
DD
= 50V
HUFA75639G3, HUFA75639P3, HUFA75639S3S
相關(guān)PDF資料
PDF描述
HUFA75645P3 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs
HUFA75645S3S 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs
HUFA75652G3 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
HUFA75823D3 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET
HUFA75823D3S 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUFA75639S3ST 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75639S3ST_F085A 功能描述:MOSFET N-CHAN UltraFET Pwr 56A 100V 0.025Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75639S3ST_S2457 制造商:Fairchild Semiconductor Corporation 功能描述:
HUFA75645P3 功能描述:MOSFET 75a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75645S3S 功能描述:MOSFET 75a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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