參數(shù)資料
型號(hào)： HUFA75329P3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
中文描述： 49 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/10頁(yè)
文件大小： 311K
代理商： HUFA75329P3
2001 Fairchild Semiconductor Corporation
HUFA75329D3, HUFA75329D3S Rev. A
HUFA75329D3, HUFA75329D3S
20A, 55V, 0.026 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Features
20A, 55V
Simulation Models
- Temperature Compensated PSPICE and SABER
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.Fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75329D3
TO-251AA
75329D
HUFA75329D3S
TO-252AA
75329D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUFA75329D3ST.
D
G
S
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
June 1999
File Number
4426.4
相關(guān)PDF資料
PDF描述
HUFA75332G3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75332P3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75332S3S 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75333S3S 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
HUFA75333G3 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUFA75329S3S 功能描述:MOSFET 55V 49a 0.024 Ohms Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75329S3ST 功能描述:MOSFET 55V 49a 0.024 Ohms Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75332G3 功能描述:MOSFET 55V 60a 0.019 Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75332G3_Q 功能描述:MOSFET 55V 60a 0.019 Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUFA75332P3 功能描述:MOSFET 55V 60a 0.019 Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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