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參數(shù)資料
| 型號： | HUF76629D3ST |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA |
| 中文描述： | 20 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 203K |
| 代理商： | HUF76629D3ST |
2001 Fairchild Semiconductor Corporation
HUF76629D3, HUF76629D3S Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
10
300
300
1
1
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
C
= 25
C
T
J
= MAX RATED
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
10
100
0.001
0.01
0.1
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
50
0
10
20
30
40
1.5
2
2.5
3
3.5
4.5
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= -55
o
C
4
50
0
10
20
30
40
0
1
2
3
4
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
I
D
= 10A
30
40
50
60
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 20A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0.5
1.0
1.5
2.0
3.0
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 20A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
160
2.5
HUF76629D3, HUF76629D3S
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HUF76629D3ST_F085 | 功能描述:MOSFET N-Channel Logic Level UltraFET Power MOSFET 100V, 20A, 52m RoHS:否 制造商:Fairchild Semiconductor 晶體管極性: 汲極/源極擊穿電壓: 閘/源擊穿電壓: 漏極連續(xù)電流: 電阻汲極/源極 RDS（導(dǎo)通）: 配置: 最大工作溫度: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| HUF76629D3ST_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76629D3ST_SB82250 | 制造商:Fairchild Semiconductor Corporation 功能描述:FSCHUF76629D3ST_SB82250 ULTRAFET POWER M |
| HUF76629D3STNL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76629D3STR4885 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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