參數(shù)資料
型號(hào): HUF76629D3
廠商: INTERSIL CORP
元件分類(lèi): 功率晶體管
英文描述: 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(20A, 100V, 0.054Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
中文描述: 20 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 334K
代理商: HUF76629D3
5
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.4
0.8
1.0
1.4
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.6
160
1.2
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
160
10
100
1000
3000
0.1
1.0
10
100
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
10
20
30
40
V
G
,
V
DD
= 50V
Q
g
, GATE CHARGE (nC)
I
D
= 20A
I
D
= 10A
WAVEFORMS IN
DESCENDING ORDER:
50
100
250
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 50V, I
D
= 20A
t
r
t
f
t
d(ON)
t
d(OFF)
150
200
100
200
300
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 50V, I
D
= 20A
t
d(OFF)
t
r
t
d(ON)
t
f
50
150
250
HUF76629D3, HUF76629D3S
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