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參數(shù)資料
| 型號(hào)： | HUF76619D3S |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(18A, 100V, 0.087Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 18 A, 100 V, 0.089 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁(yè)數(shù)： | 9/9頁(yè) |
| 文件大小： | 108K |
| 代理商： | HUF76619D3S |
9
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ISO9000
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
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For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
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TEL: (407) 724-7000
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Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
SPICE Thermal Model
REV 28August 1999
HUF76619T
CTHERM1 th 6 1.0e-3
CTHERM2 6 5 3.0e-3
CTHERM3 5 4 4.0e-3
CTHERM4 4 3 7.0e-3
CTHERM5 3 2 1.0e-2
CTHERM6 2 tl 5.0e-1
RTHERM1 th 6 9.31e-3
RTHERM2 6 5 8.11e-2
RTHERM3 5 4 2.0e-1
RTHERM4 4 3 4.5e-1
RTHERM5 3 2 7.0e-1
RTHERM6 2 tl 2.0e-1
SABER Thermal Model
SABER thermal model HUF76619T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 1.0e-3
ctherm.ctherm2 6 5 = 3.0e-3
ctherm.ctherm3 5 4 = 4.0e-3
ctherm.ctherm4 4 3 = 7.0e-3
ctherm.ctherm5 3 2 = 1.0e-2
ctherm.ctherm6 2 tl = 5.0e-1
rtherm.rtherm1 th 6 = 9.31e-3
rtherm.rtherm2 6 5 = 8.11e-2
rtherm.rtherm3 5 4 = 2.0e-1
rtherm.rtherm4 4 3 = 4.5e-1
rtherm.rtherm5 3 2 = 7.0e-1
rtherm.rtherm6 2 tl = 2.0e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF76619D3, HUF76619D3S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76619D3ST | 功能描述:MOSFET 18a 100V 0.087 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76629D3 | 功能描述:MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76629D3S | 功能描述:MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76629D3ST | 功能描述:MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76629D3ST_F085 | 功能描述:MOSFET N-Channel Logic Level UltraFET Power MOSFET 100V, 20A, 52m RoHS:否 制造商:Fairchild Semiconductor 晶體管極性: 汲極/源極擊穿電壓: 閘/源擊穿電壓: 漏極連續(xù)電流: 電阻汲極/源極 RDS（導(dǎo)通）: 配置: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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