參數(shù)資料
型號(hào): HUF76432P3
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: Dual Differential Drivers And Receivers 16-TSSOP -40 to 85
中文描述: 59 A, 60 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 4/10頁
文件大?。?/td> 216K
代理商: HUF76432P3
2001 Fairchild Semiconductor Corporation
HUF76432P3, HUF76432S3S Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
10
100
400
1
1
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DS(ON)
LIMITED BY r
OPERATION IN THIS
T
C
= 25
o
C
J
= MAX RATED
T
10
100
200
0.001
0.01
0.1
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
10
20
30
40
60
1.5
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.5
3
3.5
4
I
D
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
50
T
J
= 175
o
C
T
J
= -55
o
C
0
10
20
30
40
60
50
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
I
D
,
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 5V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 4V
I
D
= 18A
10
20
30
40
50
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 55A
r
D
,
O
)
I
D
= 37A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 59A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
160
HUF76432P3, HUF76432S3S
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PDF描述
HUF76432S3S Dual Differential Drivers And Receivers 16-TSSOP -40 to 85
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