參數(shù)資料
型號(hào)： HUF76423P3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(33A, 60V, 0.035Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
中文描述： 35 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 359K
代理商： HUF76423P3
2
HUF76423P3, HUF76423S3S
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 12)
I
D
= 250
μ
A, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
16V
60
-
-
V
55
-
-
V
Zero Gate Voltage Drain Current
I
DSS
-
-
1
μ
A
μ
A
nA
-
-
250
Gate to Source Leakage Current
I
GSS
-
-
±
100
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 11)
I
D
= 35A, V
GS
= 10V (Figures 9, 10)
I
D
= 23A, V
GS
= 5V (Figure 9)
I
D
= 22A, V
GS
= 4.5V (Figure 9)
1
-
3
V
Drain to Source On Resistance
-
0.025
0.030
-
0.029
0.035
-
0.032
0.038
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
TO-220 and TO-263
-
-
1.76
o
C/W
o
C/W
Thermal Resistance Junction to
Ambient
-
-
62
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 30V, I
D
= 22A
V
GS
=
4.5V, R
GS
= 10
(Figures 15, 21, 22)
-
-
245
ns
Turn-On Delay Time
-
12
-
ns
Rise Time
-
147
-
ns
Turn-Off Delay Time
-
32
-
ns
Fall Time
-
50
-
ns
Turn-Off Time
-
-
125
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 30V, I
D
= 35A
V
GS
=
10V,
R
GS
= 10
(Figures 16, 21, 22)
-
-
140
ns
Turn-On Delay Time
-
7
-
ns
Rise Time
-
85
-
ns
Turn-Off Delay Time
-
47
-
ns
Fall Time
-
76
-
ns
Turn-Off Time
-
-
185
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V,
I
D
= 23A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
28
34
nC
Gate Charge at 5V
-
15
18
nC
Threshold Gate Charge
-
1.2
1.5
nC
Gate to Source Gate Charge
-
3.5
-
nC
Gate to Drain “Miller” Charge
-
7
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
1060
-
pF
Output Capacitance
-
315
-
pF
Reverse Transfer Capacitance
-
65
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 23A
I
SD
= 11.5A
I
SD
= 23A, dI
SD
/dt = 100A/
μ
s
I
SD
= 23A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.0
V
Reverse Recovery Time
t
rr
-
-
80
ns
Reverse Recovered Charge
Q
RR
-
-
205
nC
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