參數(shù)資料
型號： HUF76419S3S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
中文描述： 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 7/9頁
文件大?。?/td> 332K
代理商： HUF76419S3S
4-7
PSPICE Electrical Model
.SUBCKT HUF76419D3 2 1 3 ;
rev 8 July 1999
CA 12 8 1.20e-9
CB 15 14 1.20e-9
CIN 6 8 8.49e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 68.35
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 2.51e-9
LSOURCE 3 7 3.57e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.12e-2
RGATE 9 20 3.12
RLDRAIN 2 5 10
RLGATE 1 9 25.1
RLSOURCE 3 7 35.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 1.60e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*98),3))}
.MODEL DBODYMOD D (IS = 8.51e-13 RS = 1.03e-2 TRS1 = 1.08e-3 TRS2 = 9.91e-7 CJO = 1.06e-9 TT = 4.90e-8 M = 0.5)
.MODEL DBREAKMOD D (RS = 2.39e-1 TRS1 = 1.23e-4 TRS2 = 1.11e-6)
.MODEL DPLCAPMOD D (CJO = 7.42e-10 IS = 1e-30 M = 0.85)
.MODEL MMEDMOD NMOS (VTO = 1.98 KP = 2.1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.12)
.MODEL MSTROMOD NMOS (VTO = 2.33 KP = 50 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.75 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 31.2 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.14e-3 TC2 = 1.02e-9)
.MODEL RDRAINMOD RES (TC1 = 1.19e-2 TC2 = 3.22e-5)
.MODEL RSLCMOD RES (TC1 = 9.91e-4 TC2 = 3.17e-5)
.MODEL RSOURCEMOD RES (TC1 = 1.0e-3 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -2.34e-3 TC2 = -5.33e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.45e-3 TC2 = 0)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.5 VOFF= -3.0)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.0 VOFF= -5.5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.2 VOFF= 0.1)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.1 VOFF= -0.2)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF76419D3, HUF76419D3S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76419S3ST 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76419S3ST_F085 功能描述:MOSFET 60V, 29A, 35mOhm N-Channel Mosfet RoHS:否 制造商:Fairchild Semiconductor 晶體管極性:N-Channel 汲極/源極擊穿電壓:60 V 閘/源擊穿電壓:16 V 漏極連續(xù)電流:29 A 電阻汲極/源極 RDS（導通）:35 mOhms 配置:Single 最大工作溫度:+ 175 C 安裝風格:SMD/SMT 封裝 / 箱體:TO-263AB 封裝:Reel
HUF76419S3ST_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76419S3ST_R4908 制造商:Fairchild Semiconductor Corporation 功能描述:FSCHUF76419S3ST_R4908 TO-263AB, SINGLE, 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76419T3S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3.5A I(D) | SOT-223
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