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參數(shù)資料
| 型號： | HUF76409P3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(17A, 60V, 0.070Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| 中文描述： | 18 A, 60 V, 0.074 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 105K |
| 代理商： | HUF76409P3 |
7
PSPICE Electrical Model
.SUBCKT HUF76409 2 1 3 ;
rev 12 August 1999
CA 12 8 6.30e-10
CB 15 14 6.30e-10
CIN 6 8 4.60e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 66.55
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.00e-9
LGATE 1 9 6.16e-9
LSOURCE 3 7 5.06e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.88e-2
RGATE 9 20 3.72
RLDRAIN 2 5 10
RLGATE 1 9 61.6
RLSOURCE 3 7 50.6
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 2.40e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*43),3))}
.MODEL DBODYMOD D (IS = 3.84e-13 RS = 1.58e-2 TRS1 = -1.5e-3 TRS2 = 5.5e-6 CJO = 6.4e-10 TT = 4.40e-8 XTI =4.35 M = 0.52)
.MODEL DBREAKMOD D (RS = 3.70e-1 TRS1 = 9.10e-4 TRS2 = -1e-6)
.MODEL DPLCAPMOD D (CJO = 3.70e-10 IS = 1e-30 N = 10 M = 0.79)
.MODEL MMEDMOD NMOS (VTO = 2.08 KP = 3.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.72)
.MODEL MSTROMOD NMOS (VTO = 2.40 KP = 28 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.80 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 37.2 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.10e-3 TC2 = 1.00e-7)
.MODEL RDRAINMOD RES (TC1 = 9.80e-3 TC2 = 2.85e-5)
.MODEL RSLCMOD RES (TC1 = 5.00e-3 TC2 = 5.05e-6)
.MODEL RSOURCEMOD RES (TC1 = 1.5e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.48e-3 TC2 = -8.30e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.68e-3 TC2 = 8e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5 VOFF= -2.8)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.8 VOFF= -5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -0.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF76409P3
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| HUF76419P3 | 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(27A, 60V, 0.040Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76423P3 | 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(33A, 60V, 0.035Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
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| HUF76439S3S | 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(71A, 60V, 0.014Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76409S3S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-263AB |
| HUF76409T3S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 |
| HUF76413D3 | 功能描述:MOSFET 20a 60V 0.056 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76413D3S | 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76413D3ST | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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