參數(shù)資料
型號： HUF76409D3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:EZ5015; No. of Contacts:4; Connector Shell Size:20; Connecting Termination:Spring Cage; Circular Shell Style:Square Flange Receptacle RoHS Compliant: Yes
中文描述： 18 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 5/10頁
文件大?。?/td> 206K
代理商： HUF76409D3
2001 Fairchild Semiconductor Corporation
HUF76409D3, HUF76409D3S Rev. B
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
0.4
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.6
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
100
2000
0.1
1.0
10
60
10
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
1000
2
4
6
8
10
0
3
6
9
12
15
0
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 30V
I
D
= 17A
I
D
= 12A
I
D
= 7A
WAVEFORMS IN
DESCENDING ORDER:
150
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 30V, I
D
= 8A
t
r
t
f
t
d(ON)
t
d(OFF)
120
30
60
90
20
40
60
100
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 30V, I
D
= 18A
t
r
t
d(ON)
t
f
t
d(OFF)
80
HUF76409D3, HUF76409D3S
相關PDF資料
PDF描述
HUF76409D3S 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76409P3 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76413D3 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(20A, 60V, 0.056Ω N溝道邏輯電平功率MOS場效應管)
HUF76413D3S 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(20A, 60V, 0.056Ω N溝道邏輯電平功率MOS場效應管)
HUF76413D3 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
HUF76409D3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76409D3ST 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76409D3ST_R4921 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76409D3ST_S2457 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76409P3 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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