參數(shù)資料
型號： HUF76139S3S
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管)
中文描述： 75 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 3/10頁
文件大?。?/td> 121K
代理商： HUF76139S3S
6-156
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
75A
R
L
= 0.200
, V
GS
=
10V,
R
GS
= 10
(Figures 16, 21, 22)
-
-
120
ns
Turn-On Delay Time
t
d(ON)
-
16
-
ns
Rise Time
t
r
-
65
-
ns
Turn-Off Delay Time
t
d(OFF)
-
90
-
ns
Fall Time
t
f
-
55
-
ns
Turn-Off Time
t
OFF
-
-
218
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V,
I
D
64A,
R
L
= 0.234
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
65
78
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
38
46
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
2.5
3
nC
Gate to Source Gate Charge
Q
gs
-
7.60
-
nC
Gate to Drain “Miller”Charge
Q
gd
-
18.40
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
2700
-
pF
Output Capacitance
C
OSS
-
1100
-
pF
Reverse Transfer Capacitance
C
RSS
-
200
-
pF
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 75A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
-
-
85
ns
Reverse Recovered Charge
Q
RR
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
-
-
160
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
20
40
60
80
25
50
75
100
125
150
V
GS
= 10V
V
GS
= 4.5V
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
HUF76139P3, HUF76139S3S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76139S3ST 功能描述:MOSFET USE 512-FDB8896 Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76139S3STK 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76143P3 功能描述:MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76143S3 功能描述:MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76143S3S 功能描述:MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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